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首頁>IS43DR16128B-25EBLI>芯片詳情
IS43DR16128B-25EBLI 集成電路(IC)存儲器 ISSI/北京矽成
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品參考屬性
- 類型
描述
- 產(chǎn)品編號:
IS43DR16128B-25EBLI
- 制造商:
ISSI, Integrated Silicon Solution Inc
- 類別:
- 包裝:
卷帶(TR)
- 存儲器類型:
易失
- 存儲器格式:
DRAM
- 技術(shù):
SDRAM - DDR2
- 存儲容量:
2Gb(128M x 16)
- 存儲器接口:
并聯(lián)
- 寫周期時(shí)間 - 字,頁:
15ns
- 電壓 - 供電:
1.7V ~ 1.9V
- 工作溫度:
-40°C ~ 85°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
84-TFBGA
- 供應(yīng)商器件封裝:
84-TW-BGA(10.5x13.5)
- 描述:
IC DRAM 2GBIT PARALLEL 84TWBGA
供應(yīng)商
- 企業(yè):
深圳市英科美電子有限公司
- 商鋪:
- 聯(lián)系人:
張先生
- 手機(jī):
15507502698
- 詢價(jià):
- 電話:
0755-23903058
- 傳真:
0755-23905869
- 地址:
深圳市福田區(qū)振興路西101號華勻大廈1棟730
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