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首頁>IS43DR16128B-3DBLI>芯片詳情
IS43DR16128B-3DBLI 集成電路(IC)存儲器 ISSI/北京矽成
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原廠料號:IS43DR16128B-3DBLI品牌:ISSI
原裝正品現(xiàn)貨
IS43DR16128B-3DBLI是集成電路(IC) > 存儲器。制造商ISSI/ISSI, Integrated Silicon Solution Inc生產(chǎn)封裝BGA84/84-TFBGA的IS43DR16128B-3DBLI存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設備的半導體器件。這些器件分為非易失性或易失性兩種,格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等,接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-Wire。
產(chǎn)品屬性
更多- 類型
描述
- 產(chǎn)品編號:
IS43DR16128B-3DBLI
- 制造商:
ISSI, Integrated Silicon Solution Inc
- 類別:
- 包裝:
卷帶(TR)
- 存儲器類型:
易失
- 存儲器格式:
DRAM
- 技術:
SDRAM - DDR2
- 存儲容量:
2Gb(128M x 16)
- 存儲器接口:
并聯(lián)
- 寫周期時間 - 字,頁:
15ns
- 電壓 - 供電:
1.7V ~ 1.9V
- 工作溫度:
-40°C ~ 85°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
84-TFBGA
- 供應商器件封裝:
84-TW-BGA(10.5x13.5)
- 描述:
IC DRAM 2GBIT PARALLEL 84TWBGA
供應商
- 企業(yè):
深圳市宏興瑞科技有限公司
- 商鋪:
- 聯(lián)系人:
朱小姐
- 手機:
18923720076
- 詢價:
- 電話:
0755-23946805
- 地址:
深圳市福田區(qū)華強北上步工業(yè)區(qū)205棟3樓A05
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