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首頁>IS43R86400F-6BLI>芯片詳情
IS43R86400F-6BLI 集成電路(IC)存儲器 ISSI/北京矽成
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品參考屬性
- 類型
描述
- 產(chǎn)品編號:
IS43R86400F-6BLI
- 制造商:
ISSI, Integrated Silicon Solution Inc
- 類別:
- 包裝:
卷帶(TR)
- 存儲器類型:
易失
- 存儲器格式:
DRAM
- 技術(shù):
SDRAM - DDR
- 存儲容量:
512Mb(64M x 8)
- 存儲器接口:
并聯(lián)
- 寫周期時(shí)間 - 字,頁:
15ns
- 電壓 - 供電:
2.3V ~ 2.7V
- 工作溫度:
-40°C ~ 85°C(TA)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
60-TFBGA
- 供應(yīng)商器件封裝:
60-TFBGA(8x13)
- 描述:
IC DRAM 512MBIT PARALLEL 60TFBGA
供應(yīng)商
- 企業(yè):
深圳深宇韜電子科技有限公司
- 商鋪:
- 聯(lián)系人:
江先生
- 手機(jī):
18002582204
- 詢價(jià):
- 電話:
0755-28014589
- 地址:
深圳市福田區(qū)深南大道與中航路交匯處世紀(jì)廣場2103
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