FEATURES

● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V

● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V

- Backward compatible to 1.5V

● High speed data transfer rates with system frequency up to 1066 MHz

● 8 internal banks for concurrent operation

● 8n-Bit pre-fetch architecture

● Programmable CAS Latency

● Programmable Additive Latency: 0, CL-1,CL-2

● Programmable CAS WRITE latency (CWL) based on tCK

● Programmable Burst Length: 4 and 8

● Programmable Burst Sequence: Sequential or Interleave

● BL switch on the fly

● Auto Self Refresh(ASR)

● Self Refresh Temperature(SRT)

● Refresh Interval:

7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C

3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C

● Partial Array Self Refresh

● Asynchronous RESET pin

● TDQS (Termination Data Strobe) supported (x8 only)

● OCD (Off-Chip Driver Impedance Adjustment)

● Dynamic ODT (On-Die Termination)

● Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)

● Write Leveling

● Up to 200 MHz in DLL off mode

● Operating temperature:

Commercial (TC = 0°C to +95°C)

Industrial (TC = -40°C to +95°C)

Automotive, A1 (TC = -40°C to +95°C)

Automotive, A2 (TC = -40°C to +105°C)

IS43TR16256A-093NBL屬于集成電路（IC） > 存儲器。北京矽成半導(dǎo)體有限公司制造生產(chǎn)的IS43TR16256A-093NBL存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。