DESCRIPTION

TheISSI IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.

FEATURES

? High-speed access time: 8, 10 ns

? CMOS low power operation

— 756 mW (max.) operating @ 8 ns

— 36 mW (max.) standby @ 8 ns

? TTL compatible interface levels

? Single 3.3V power supply

? Fully static operation: no clock or refresh required

? Three state outputs

? Available in 119-pin Plastic Ball Grid Array (PBGA) and 100-pin TQFP packages.

? Industrial temperature available

? Lead-free available

IS61LV12824-8B屬于集成電路（IC） > 存儲(chǔ)器。北京矽成半導(dǎo)體有限公司制造生產(chǎn)的IS61LV12824-8B存儲(chǔ)器存儲(chǔ)器是集成電路上用作數(shù)據(jù)存儲(chǔ)設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性?xún)煞N，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲(chǔ)容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線(xiàn)、SPI、UFS、Xccela 總線(xiàn)和 1-線(xiàn)。