IS62WV25616ALL-70TI中文資料北京矽成數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low power consumption devices.

FEATURES

? High-speed access time: 55ns, 70ns

? CMOS low power operation

36 mW (typical) operating

9 μW (typical) CMOS standby

? TTL compatible interface levels

? Single power supply

1.65V--2.2V VDD (IS62WV25616ALL)

2.5V--3.6V VDD (IS62WV25616BLL)

? Fully static operation: no clock or refresh required

? Three state outputs

? Data control for upper and lower bytes

? Industrial temperature available

? Lead-free available