IS62WV6416BLL-55B2I中文資料北京矽成數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

The ISSI IS62WV6416ALL/ IS62WV6416BLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

FEATURES

? High-speed access time: 45ns, 55ns

? CMOS low power operation:

30 mW (typical) operating

15 μW (typical) CMOS standby

? TTL compatible interface levels

? Single power supply

1.7V--2.2V VDD (62WV6416ALL)

2.5V--3.6V VDD (62WV6416BLL)

? Fully static operation: no clock or refresh required

? Three state outputs

? Data control for upper and lower bytes

? Industrial temperature available

? 2CS Option Available

? Lead-free available