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ISF40NF20

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainCurrent–ID=40A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.06Ω(Max) ·FastSwitchingSpeed ·LowDriveRequirement ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STB40NF20

N-channel200V-0.038廓-40A-D2PAK/TO-220/TO-220FP/TO-247LowgatechargeSTripFET??PowerMOSFET

Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconverters. ■Gatechargeminimi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB40NF20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=40A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=45mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STF40NF20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=40A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=45mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STF40NF20

N-channel200V-0.038廓-40A-D2PAK/TO-220/TO-220FP/TO-247LowgatechargeSTripFET??PowerMOSFET

Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconverters. ■Gatechargeminimi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP40NF20

N-channel200V-0.038廓-40A-D2PAK/TO-220/TO-220FP/TO-247LowgatechargeSTripFET??PowerMOSFET

Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconverters. ■Gatechargeminimi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP40NF20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=40A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=45mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STW40NF20

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STW40NF20

N-channel200V-0.038廓-40A-D2PAK/TO-220/TO-220FP/TO-247LowgatechargeSTripFET??PowerMOSFET

Description ThisPowerMOSFETseriesrealizedwithSTMicroelectronicsuniqueSTripFETprocesshasspecificallybeendesignedtominimizeinputcapacitanceandgatecharge.ItisthereforesuitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconverters. ■Gatechargeminimi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

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NA
990000
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2500
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更多ISF40NF20供應(yīng)商 更新時(shí)間2025-1-15 16:20:00

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