首頁(yè) >ISL9000AIRBCZ>規(guī)格書列表
| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
ISL9000AIRBCZ | Dual LDO with Low Noise, Very High PSRR and Low IQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | |
ISL9000AIRBCZ | Dual LDO with Low Noise, Very High PSRR and Low IQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1μFto10μFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | Intersil Intersil Corporation | Intersil | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1μFto10μFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1μFto10μFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1μFto10μFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1μFto10μFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1μFto10μFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1μFto10μFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1μFto10μFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | Intersil Intersil Corporation | Intersil |
詳細(xì)參數(shù)
- 型號(hào)：
ISL9000AIRBCZ
- 功能描述：
IC REG LDO 1.5V/1.8V .3A 10-DFN
- RoHS：
是
- 類別：
集成電路(IC) >> PMIC - 穩(wěn)壓器 - 線性
- 系列：
-
- 標(biāo)準(zhǔn)包裝：
1
- 穩(wěn)壓器拓?fù)浣Y(jié)構(gòu)：
正，可調(diào)式
- 輸出電壓：
1.25 V ~ 10 V
- 輸入電壓：
2.9 V ~ 12 V 電壓 -
- 壓降（標(biāo)準(zhǔn)）：
-
- 穩(wěn)壓器數(shù)量：
1 電流 -
- 輸出：
700mA 電流 -
- 限制（最?。?/span>
-
- 工作溫度：
-40°C ~ 85°C
- 安裝類型：
表面貼裝
- 封裝/外殼：
10-VFDFN 裸露焊盤
- 供應(yīng)商設(shè)備封裝：
10-DFN（3x3）
- 包裝：
Digi-Reel®
- 其它名稱：
NCV8535MNADJR2GOSDKR
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
INTERSIL |
23+ |
DFN |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
INTERSIL |
23+ |
DFN |
8890 |
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
詢價(jià) | ||
INTERSIL |
2016+ |
QFN |
5152 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) | ||
intersil |
24+ |
QFN |
2679 |
原裝優(yōu)勢(shì)!絕對(duì)公司現(xiàn)貨!可長(zhǎng)期供貨! |
詢價(jià) | ||
INTERSIL |
18+ |
DFN |
25671 |
全新原裝現(xiàn)貨,可出樣品,可開增值稅發(fā)票 |
詢價(jià) | ||
INTERSIL |
1922+ |
DFN-10 |
6852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
INTERSI |
2020+ |
DFN-10 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
INTERSIL |
09+ |
DFN-10 |
50000 |
普通 |
詢價(jià) | ||
Intersil |
24+ |
10-DFN |
5393 |
原裝現(xiàn)貨 |
詢價(jià) | ||
Intersil |
1931+ |
N/A |
493 |
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詢價(jià) |
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