首頁 >ISL9000AIRKCZ-T>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1μFto10μFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1μFto10μFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1μFto10μFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1μFto10μFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1μFto10μFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1μFto10μFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
詳細參數(shù)
- 型號:
ISL9000AIRKCZ-T
- 功能描述:
IC REG LDO 2.85V/1.8V .3A 10-DFN
- RoHS:
是
- 類別:
集成電路(IC) >> PMIC - 穩(wěn)壓器 - 線性
- 系列:
-
- 標準包裝:
1
- 穩(wěn)壓器拓撲結構:
正,可調式
- 輸出電壓:
1.25 V ~ 10 V
- 輸入電壓:
2.9 V ~ 12 V 電壓 -
- 壓降(標準):
-
- 穩(wěn)壓器數(shù)量:
1 電流 -
- 輸出:
700mA 電流 -
- 限制(最?。?/span>
-
- 工作溫度:
-40°C ~ 85°C
- 安裝類型:
表面貼裝
- 封裝/外殼:
10-VFDFN 裸露焊盤
- 供應商設備封裝:
10-DFN(3x3)
- 包裝:
Digi-Reel®
- 其它名稱:
NCV8535MNADJR2GOSDKR
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
RENESAS/瑞薩 |
23+ |
DFN-10 |
60000 |
全新、原裝 |
詢價 | ||
Intersil |
24+ |
10-DFN |
5732 |
原裝現(xiàn)貨 |
詢價 | ||
Intersil |
1931+ |
N/A |
493 |
加我qq或微信,了解更多詳細信息,體驗一站式購物 |
詢價 | ||
INTERSIL |
20+ |
DFN-10 |
6000 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
RENESAS(瑞薩電子) |
22+ |
NA |
500000 |
萬三科技,秉承原裝,購芯無憂 |
詢價 | ||
RENESAS(瑞薩)/IDT |
23+ |
DFN10(3x3) |
7350 |
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術支持!!! |
詢價 | ||
RENESAS(瑞薩)/IDT |
23+ |
DFN10(3x3) |
6000 |
誠信服務,絕對原裝原盤 |
詢價 | ||
Intersil |
2318+ |
VFDFN-10 |
6890 |
長期供貨進口原裝熱賣現(xiàn)貨 |
詢價 | ||
Renesas Electronics Corporatio |
23+/24+ |
10-VFDFN |
8600 |
只供原裝進口公司現(xiàn)貨+可訂貨 |
詢價 | ||
Renesas Electronics America In |
24+ |
10-VFDFN 裸露焊盤 |
9350 |
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證 |
詢價 |
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