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ISL9000IRBLZ

Dual LDO with Low Noise, Very High PSRR, and Low IQ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin

Intersil

Intersil Corporation

ISL9000IRBLZ

Dual LDO with Low Noise, Very High PSRR and Low IQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL9000IRBLZ

包裝:卷帶(TR) 封裝/外殼:10-VFDFN 裸露焊盤 類別:集成電路(IC) 線性 + 開關(guān)穩(wěn)壓器 描述:IC REG LINEAR 1.5V/2.9V 10DFN

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

ISL9000IRBLZ

包裝:卷帶(TR) 封裝/外殼:10-VFDFN 裸露焊盤 類別:集成電路(IC) 穩(wěn)壓器 - 線性 描述:IC REG LINEAR 1.5V/2.9V 10DFN

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

ISL9000IRBLZ-T

包裝:卷帶(TR) 封裝/外殼:10-VFDFN 裸露焊盤 類別:集成電路(IC) 線性 + 開關(guān)穩(wěn)壓器 描述:IC REG LINEAR 1.5V/2.9V 10DFN

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

ISL9000IRCCZ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin

Intersil

Intersil Corporation

ISL9000IRCCZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL9000IRCJZ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin

Intersil

Intersil Corporation

ISL9000IRCJZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL9000IRFCZ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin

Intersil

Intersil Corporation

ISL9000IRFCZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL9000IRFDZ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin

Intersil

Intersil Corporation

ISL9000IRFDZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL9000IRFJZ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin

Intersil

Intersil Corporation

ISL9000IRFJZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL9000IRGCZ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin

Intersil

Intersil Corporation

ISL9000IRGCZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL9000IRGPZ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin

Intersil

Intersil Corporation

ISL9000IRGPZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL9000IRJBZ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin

Intersil

Intersil Corporation

產(chǎn)品屬性

  • 產(chǎn)品編號:

    ISL9000IRBLZ

  • 制造商:

    Renesas Electronics America Inc

  • 類別:

    集成電路(IC) > 線性 + 開關(guān)穩(wěn)壓器

  • 包裝:

    卷帶(TR)

  • 輸出配置:

  • 輸出類型:

    固定

  • 電壓 - 輸入(最大值):

    6.5V

  • 電壓 - 輸出(最小值/固定):

    1.5V,2.9V

  • 電壓降(最大值):

    -,0.325V @ 300mA

  • 電流 - 輸出:

    300mA,300mA

  • 控制特性:

    使能,上電復(fù)位

  • 保護功能:

    過流,超溫,欠壓鎖定(UVLO)

  • 工作溫度:

    -40°C ~ 85°C

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    10-VFDFN 裸露焊盤

  • 供應(yīng)商器件封裝:

    10-DFN(3x3)

  • 描述:

    IC REG LINEAR 1.5V/2.9V 10DFN

供應(yīng)商型號品牌批號封裝庫存備注價格
INTERSIL
20+
DFN-10
1001
就找我吧!--邀您體驗愉快問購元件!
詢價
Intersil
22+
10DFN
9000
原廠渠道,現(xiàn)貨配單
詢價
Intersil
23+
10DFN
9000
原裝正品,支持實單
詢價
Renesas
22+
10-VFDFN
9000
原廠渠道,現(xiàn)貨配單
詢價
Intersil
2318+
VFDFN-10
6890
長期供貨進口原裝熱賣現(xiàn)貨
詢價
Renesas Electronics America In
24+
10-VFDFN 裸露焊盤
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
INTERSIL
22+
QFN
8000
原裝正品支持實單
詢價
Renesas Electronics Corporatio
23+/24+
10-VFDFN
8600
只供原裝進口公司現(xiàn)貨+可訂貨
詢價
INTERSIL
23+
DFN
5000
原裝正品,假一罰十
詢價
INTERSIL
23+
DFN
8890
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
詢價
更多ISL9000IRBLZ供應(yīng)商 更新時間2021-9-14 10:50:00