首頁 >ISL9000IRJBZ-T>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
ISL9000IRJBZ-T | 包裝:剪切帶(CT) 封裝/外殼:10-VFDFN 裸露焊盤 類別:集成電路(IC) 線性 + 開關(guān)穩(wěn)壓器 描述:IC REG LINEAR 1.5V/2.8V 10DFN | Renesas Electronics America Inc Renesas Electronics America Inc | Renesas Electronics America Inc | |
ISL9000IRJBZ-T | 包裝:剪切帶(CT) 封裝/外殼:10-VFDFN 裸露焊盤 類別:集成電路(IC) 穩(wěn)壓器 - 線性 描述:IC REG LINEAR 1.5V/2.8V 10DFN | Renesas Electronics America Inc Renesas Electronics America Inc | Renesas Electronics America Inc | |
DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
產(chǎn)品屬性
- 產(chǎn)品編號:
ISL9000IRJBZ-T
- 制造商:
Renesas Electronics America Inc
- 類別:
集成電路(IC) > 線性 + 開關(guān)穩(wěn)壓器
- 包裝:
剪切帶(CT)
- 輸出配置:
正
- 輸出類型:
固定
- 電壓 - 輸入(最大值):
6.5V
- 電壓 - 輸出(最小值/固定):
1.5V,2.8V
- 電壓降(最大值):
-,0.4V @ 300mA
- 電流 - 輸出:
300mA,300mA
- 控制特性:
使能,上電復(fù)位
- 保護(hù)功能:
過流,超溫,欠壓鎖定(UVLO)
- 工作溫度:
-40°C ~ 85°C
- 安裝類型:
表面貼裝型
- 封裝/外殼:
10-VFDFN 裸露焊盤
- 供應(yīng)商器件封裝:
10-DFN(3x3)
- 描述:
IC REG LINEAR 1.5V/2.8V 10DFN
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Intersil |
24+ |
10-DFN |
4586 |
原裝現(xiàn)貨 |
詢價 | ||
INTERSIL |
20+ |
DFN-10 |
1001 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
INTERSIL |
22+ |
10-DFN |
4500 |
全新原裝品牌專營 |
詢價 | ||
Intersil |
2318+ |
VFDFN-10 |
6890 |
長期供貨進(jìn)口原裝熱賣現(xiàn)貨 |
詢價 | ||
Renesas Electronics Corporatio |
23+/24+ |
10-VFDFN |
8600 |
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨 |
詢價 | ||
Renesas Electronics America In |
24+ |
10-VFDFN 裸露焊盤 |
9350 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
INTERSIL |
24+ |
QFN10 |
1500 |
決對房間現(xiàn)貨 |
詢價 | ||
INTERSIL |
2339+ |
QFN |
5825 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存! |
詢價 | ||
23+ |
QFN |
20000 |
原廠原裝正品現(xiàn)貨 |
詢價 | |||
INTER |
24+ |
SOT23-5 |
16800 |
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢! |
詢價 |
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