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ISL9000IRJBZ-T

包裝:剪切帶(CT) 封裝/外殼:10-VFDFN 裸露焊盤 類別:集成電路(IC) 線性 + 開關(guān)穩(wěn)壓器 描述:IC REG LINEAR 1.5V/2.8V 10DFN

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

ISL9000IRJBZ-T

包裝:剪切帶(CT) 封裝/外殼:10-VFDFN 裸露焊盤 類別:集成電路(IC) 穩(wěn)壓器 - 線性 描述:IC REG LINEAR 1.5V/2.8V 10DFN

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

ISL9000IRJCZ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin

Intersil

Intersil Corporation

ISL9000IRJCZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL9000IRJMZ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin

Intersil

Intersil Corporation

ISL9000IRJMZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL9000IRJNZ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin

Intersil

Intersil Corporation

ISL9000IRJNZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL9000IRJRZ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin

Intersil

Intersil Corporation

ISL9000IRJRZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL9000IRKCZ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin

Intersil

Intersil Corporation

ISL9000IRKCZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL9000IRKFZ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin

Intersil

Intersil Corporation

ISL9000IRKFZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL9000IRKJZ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin

Intersil

Intersil Corporation

ISL9000IRKJZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL9000IRKKZ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin

Intersil

Intersil Corporation

ISL9000IRKKZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL9000IRKNZ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin

Intersil

Intersil Corporation

ISL9000IRKNZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    ISL9000IRJBZ-T

  • 制造商:

    Renesas Electronics America Inc

  • 類別:

    集成電路(IC) > 線性 + 開關(guān)穩(wěn)壓器

  • 包裝:

    剪切帶(CT)

  • 輸出配置:

  • 輸出類型:

    固定

  • 電壓 - 輸入(最大值):

    6.5V

  • 電壓 - 輸出(最小值/固定):

    1.5V,2.8V

  • 電壓降(最大值):

    -,0.4V @ 300mA

  • 電流 - 輸出:

    300mA,300mA

  • 控制特性:

    使能,上電復(fù)位

  • 保護(hù)功能:

    過流,超溫,欠壓鎖定(UVLO)

  • 工作溫度:

    -40°C ~ 85°C

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    10-VFDFN 裸露焊盤

  • 供應(yīng)商器件封裝:

    10-DFN(3x3)

  • 描述:

    IC REG LINEAR 1.5V/2.8V 10DFN

供應(yīng)商型號品牌批號封裝庫存備注價格
Intersil
24+
10-DFN
4586
原裝現(xiàn)貨
詢價
INTERSIL
20+
DFN-10
1001
就找我吧!--邀您體驗愉快問購元件!
詢價
INTERSIL
22+
10-DFN
4500
全新原裝品牌專營
詢價
Intersil
2318+
VFDFN-10
6890
長期供貨進(jìn)口原裝熱賣現(xiàn)貨
詢價
Renesas Electronics Corporatio
23+/24+
10-VFDFN
8600
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨
詢價
Renesas Electronics America In
24+
10-VFDFN 裸露焊盤
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
INTERSIL
24+
QFN10
1500
決對房間現(xiàn)貨
詢價
INTERSIL
2339+
QFN
5825
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!
詢價
23+
QFN
20000
原廠原裝正品現(xiàn)貨
詢價
INTER
24+
SOT23-5
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!
詢價
更多ISL9000IRJBZ-T供應(yīng)商 更新時間2024-12-26 15:19:00