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IXFC13N50

HiPerFETMOSFETISOPLUS220

IXYS

IXYS Corporation

IXFC13N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH13N50

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH13N50

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFJ13N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=13A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFJ13N50

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features ?Lowprofile,highpowerpackage ?Longcreepandstrikedistances ?Easyup-gradepathforTO-220designs ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedIn

IXYS

IXYS Corporation

IXFM13N50

HiPerFETPowerMOSFETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM13N50

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM13N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTC13N50

PowerMOSFETISOPLUS220

PowerMOSFETISOPLUS220TM ElectricallyIsolatedBackSurface N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features ?SiliconchiponDirect-Copper-Bond substrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation

IXYS

IXYS Corporation

供應(yīng)商型號品牌批號封裝庫存備注價格
I
23+
TO-220
10000
公司只做原裝正品
 詢價
I
TO-220
22+
6000
十年配單,只做原裝
 詢價
I
23+
TO-220
6000
原裝正品，支持實單
 詢價
IPS
23+
TO-220
54537
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價
IPS
2023+
TO-220
20000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
 詢價
IPS
23+
TO-220
89630
當天發(fā)貨全新原裝現(xiàn)貨
 詢價
IPS
2022+
TO-220
30000
進口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價
I
24+
TO-TO-220
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
IPS
23+
TO-220
33500
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
AMS
23+
原廠封裝
9888
專做原裝正品,假一罰百!
 詢價
更多ITP13N50R供應(yīng)商 更新時間2025-3-3 14:30:00

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