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IXFA10N80P

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFA10N80P

PolarHV HiPerFET Power MOSFET

PolarHV?HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●AvalancheRated ●LowPackageInductance ●EasytoDriveandtoProtect Advantages ●EasytoMount ●SpaceSavings ●HighPowerDensity Applicati

IXYS

IXYS Corporation

IXFA10N80P

Power MOSFET

IXYS

IXYS Corporation

IXFA10N80P_V01

Power MOSFET

IXYS

IXYS Corporation

IXFH10N80P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFH10N80P

PowerMOSFET

IXYS

IXYS Corporation

IXFH10N80P

PolarHVHiPerFETPowerMOSFET

PolarHV?HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●AvalancheRated ●LowPackageInductance ●EasytoDriveandtoProtect Advantages ●EasytoMount ●SpaceSavings ●HighPowerDensity Applicati

IXYS

IXYS Corporation

IXFP10N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFP10N80P

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.1Ω(Max)@VGS=10V APPLICATIONS ·Switching

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFP10N80P

PowerMOSFET

IXYS

IXYS Corporation

IXFP10N80P

PolarHVHiPerFETPowerMOSFET

PolarHV?HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●AvalancheRated ●LowPackageInductance ●EasytoDriveandtoProtect Advantages ●EasytoMount ●SpaceSavings ●HighPowerDensity Applicati

IXYS

IXYS Corporation

IXFQ10N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFQ10N80P

PolarHVHiPerFETPowerMOSFET

PolarHV?HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●InternationalStandardPackages ●AvalancheRated ●LowPackageInductance ●EasytoDriveandtoProtect Advantages ●EasytoMount ●SpaceSavings ●HighPowerDensity Applicati

IXYS

IXYS Corporation

IXFQ10N80P

PowerMOSFET

IXYS

IXYS Corporation

JCS10N80C

N-CHANNELMOSFET

APPLICATIONS ?Switchedmodepower suppliesy ?Electronicballast FEATURES ?Lowgatecharge ?LowCrss(typical8.6pF) ?Fastswitching ?100%avalanchetested ?Improveddv/dtcapability ?RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS10N80FC-F-B

N-CHANNELMOSFET

APPLICATIONS ?Switchedmodepower suppliesy ?Electronicballast FEATURES ?Lowgatecharge ?LowCrss(typical8.6pF) ?Fastswitching ?100%avalanchetested ?Improveddv/dtcapability ?RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS10N80FC-F-BR

N-CHANNELMOSFET

APPLICATIONS ?Switchedmodepower suppliesy ?Electronicballast FEATURES ?Lowgatecharge ?LowCrss(typical8.6pF) ?Fastswitching ?100%avalanchetested ?Improveddv/dtcapability ?RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS10N80GDC-GD-B

N-CHANNELMOSFET

APPLICATIONS ?Switchedmodepower suppliesy ?Electronicballast FEATURES ?Lowgatecharge ?LowCrss(typical8.6pF) ?Fastswitching ?100%avalanchetested ?Improveddv/dtcapability ?RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS10N80GDC-GD-BR

N-CHANNELMOSFET

APPLICATIONS ?Switchedmodepower suppliesy ?Electronicballast FEATURES ?Lowgatecharge ?LowCrss(typical8.6pF) ?Fastswitching ?100%avalanchetested ?Improveddv/dtcapability ?RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JMP10N80A

JJWJieJie Microelectronics Co., Ltd.

捷捷微江蘇捷捷微電子股份有限公司

PDF上傳者:深圳市溢航科技有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    IXFA10N80P

  • 功能描述:

    MOSFET 10 Amps 800V 1.1 Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS
24+
TO-263(IXFA)
30000
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IXYS/艾賽斯
23+
TO-263
59620
原裝正品 華強(qiáng)現(xiàn)貨
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IXYS
23+
DIP18
6000
15年原裝正品企業(yè)
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Littelfuse/IXYS
23+
TO-263
7828
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
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IXYS/艾賽斯
24+
TO-263
501574
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
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IXYS
24+
TO-263
8866
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IXYS
23+
TO-263-3
11846
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JINGDAO/晶導(dǎo)微
23+
SOD-123FL
69820
終端可以免費(fèi)供樣,支持BOM配單!
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IXYS
1931+
N/A
18
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1675
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更多IXFA10N80P供應(yīng)商 更新時(shí)間2025-1-7 15:33:00