首頁 >IXKG25N80C>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IXKG25N80C | CoolMOS Power MOSFET ISO264 | IXYS IXYS Corporation | IXYS | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=25A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35.Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
HiPerFETTMPowerMOSFETs HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilic | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilic | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs | IXYS IXYS Corporation | IXYS | ||
HiPerFETTMPowerMOSFETs HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilic | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilic | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModeLowRDSon,highVDSSMOSFETElectricallyIsolatedBackSurface N-ChannelEnhancementMode LowRDSon,highVDSSMOSFET ElectricallyIsolatedBackSurface Features ?SiliconchiponDirect-Copper-Bondsubstrate -highpowerdissipation -isolatedmountingsurface -2500Velectricalisolation ?3rdgenerationCoolMOS?1)powerMOSFET -high | IXYS IXYS Corporation | IXYS | ||
AdvancedTechnicalInformationCoolMOSPowerMOSFETinISOPLUS247Package | IXYS IXYS Corporation | IXYS |
詳細參數(shù)
- 型號:
IXKG25N80C
- 功能描述:
MOSFET 25 Amps 800V 0.15 Rds
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IXYS |
24+ |
ISO264? |
30000 |
晶體管-分立半導體產(chǎn)品-原裝正品 |
詢價 | ||
IXYS |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IXYS |
24+ |
TO-3PL |
2050 |
公司大量全新原裝 正品 隨時可以發(fā)貨 |
詢價 | ||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信,了解更多詳細信息,體驗一站式購物 |
詢價 | ||
IXYS |
1809+ |
ISO264? |
326 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
IXYS/艾賽斯 |
23+ |
ISO264 |
10000 |
公司只做原裝正品 |
詢價 | ||
IXYS |
22+ |
NA |
18 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
IXYS |
22+ |
ISO264? |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IXYS |
21+ |
ISO264? |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
IXYS/艾賽斯 |
23+ |
ISO264 |
43000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 |
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