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IXKG25N80C

CoolMOS Power MOSFET ISO264

IXYS

IXYS Corporation

IXFK25N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=25A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35.Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFK25N80

HiPerFETTMPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilic

IXYS

IXYS Corporation

IXFK25N80

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFK25N80

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilic

IXYS

IXYS Corporation

IXFN25N80

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFN25N80

HiPerFETTMPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilic

IXYS

IXYS Corporation

IXFN25N80

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilic

IXYS

IXYS Corporation

IXKC25N80C

N-ChannelEnhancementModeLowRDSon,highVDSSMOSFETElectricallyIsolatedBackSurface

N-ChannelEnhancementMode LowRDSon,highVDSSMOSFET ElectricallyIsolatedBackSurface Features ?SiliconchiponDirect-Copper-Bondsubstrate -highpowerdissipation -isolatedmountingsurface -2500Velectricalisolation ?3rdgenerationCoolMOS?1)powerMOSFET -high

IXYS

IXYS Corporation

IXKR25N80C

AdvancedTechnicalInformationCoolMOSPowerMOSFETinISOPLUS247Package

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號:

    IXKG25N80C

  • 功能描述:

    MOSFET 25 Amps 800V 0.15 Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
24+
ISO264?
30000
晶體管-分立半導體產(chǎn)品-原裝正品
詢價
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IXYS
24+
TO-3PL
2050
公司大量全新原裝 正品 隨時可以發(fā)貨
詢價
IXYS
1931+
N/A
18
加我qq或微信,了解更多詳細信息,體驗一站式購物
詢價
IXYS
1809+
ISO264?
326
就找我吧!--邀您體驗愉快問購元件!
詢價
IXYS/艾賽斯
23+
ISO264
10000
公司只做原裝正品
詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細信息,
詢價
IXYS
22+
ISO264?
9000
原廠渠道,現(xiàn)貨配單
詢價
IXYS
21+
ISO264?
13880
公司只售原裝,支持實單
詢價
IXYS/艾賽斯
23+
ISO264
43000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
更多IXKG25N80C供應商 更新時間2025-1-11 10:12:00