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IXTA10P50P

PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated

PolarP?PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?AvalancheRated ?RuggedPolarPTMProcess ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?High-

IXYS

IXYS Corporation

IXTH10P50

StandardPowerMOSFETP-ChannelEnhancementModeAvalancheRated

StandardPowerMOSFET P-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advan

IXYS

IXYS Corporation

IXTH10P50P

PolarPTMPowerMOSFETsP-ChannelEnhancementModeAvalancheRated

PolarP?PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?AvalancheRated ?RuggedPolarPTMProcess ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?High-

IXYS

IXYS Corporation

IXTP10P50P

PolarPTMPowerMOSFETsP-ChannelEnhancementModeAvalancheRated

PolarP?PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?AvalancheRated ?RuggedPolarPTMProcess ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?High-

IXYS

IXYS Corporation

IXTQ10P50P

PolarPTMPowerMOSFETsP-ChannelEnhancementModeAvalancheRated

PolarP?PowerMOSFETs P-ChannelEnhancementMode AvalancheRated Features ?InternationalStandardPackages ?AvalancheRated ?RuggedPolarPTMProcess ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications ?High-

IXYS

IXYS Corporation

IXTT10P50

StandardPowerMOSFETP-ChannelEnhancementModeAvalancheRated

StandardPowerMOSFET P-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advan

IXYS

IXYS Corporation

TK10P50W

MOSFETsSiliconN-ChannelMOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.327Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=0.5mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TK10P50W

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

V10P50P

Reducedfootprintandvolumerequiredforsurgeprotection

Littelfuselittelfuse

力特力特公司

WPP10P50K-F

Film/FoilPolypropyleneCapacitors

CDE

Cornell Dubilier Electronics

WPP10P50K-F

AxialLeadedHighFrequencyPulseCapacitors

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

詳細(xì)參數(shù)

  • 型號(hào)：

    IXTA10P50P

  • 功能描述：

    MOSFET -10.0 Amps -500V 1.000 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS
24+
TO-263AA
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
IXYS
21+
TO-263
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價(jià)
Littelfuse/IXYS
23+
TO-263
7828
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
 詢價(jià)
IXYS
24+
TO-263
34
詢價(jià)
IXYS
24+
SMD
5500
長(zhǎng)期供應(yīng)原裝現(xiàn)貨實(shí)單可談
 詢價(jià)
IXYS
23+
TO-263-3
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
IXYS
21+
TO-263
12588
原裝正品,自己庫(kù)存 假一罰十
 詢價(jià)
IXYS
2020+
TO-263
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
 詢價(jià)
IXYS
1931+
N/A
197
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 詢價(jià)
IXS
2021+
SMD
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
更多IXTA10P50P供應(yīng)商 更新時(shí)間2024-12-23 20:18:00

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