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IXTH10N60

10 AMP, 600V, 0.55-ohm / 0.7-ohm

10AMP,600V,0.55Ω/0.7Ω

IXYS

IXYS Corporation

IXTH10N60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTI10N60P

PolarHVPowerMOSFET

PolarHV?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTM10N60

10AMP,600V,0.55-ohm/0.7-ohm

10AMP,600V,0.55Ω/0.7Ω

IXYS

IXYS Corporation

IXTP10N60P

PolarHVPowerMOSFET

PolarHV?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTP10N60P

N-ChannelEnhancementMode

PolarHV?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTP10N60P

iscN-ChannelMOSFETTransistor

?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤740m?@VGS=10V ?Fullycharacterizedavalanchevoltageandcurrent ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATION ?DC/DCConverter ?Switch-ModeandResonant-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTP10N60PM

PolarHVPowerMOSFET

PolarHV?PowerMOSFET(ElectricallyIsolatedTab) N-ChannelEnhancementMode AvalancheRated Features ?Plasticovermoldedtabforelectricalisolation ?Internationalstandardpackage ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Corporation

IXTP10N60PM

iscN-ChannelMOSFETTransistor

?FEATURES ?DrainSourceVoltage- :VDSS=600V(Min) ?Staticdrain-sourceon-resistance :RDS(on)≤0.74?@VGS=10V ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATION ?DC/DCConverter ?Idealforhigh-frequen

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

JCS10N60BT

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

詳細參數(shù)

  • 型號:

    IXTH10N60

  • 功能描述:

    TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-247

供應商型號品牌批號封裝庫存備注價格
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IXYS
24+
TO-247
2100
公司大量全新現(xiàn)貨 隨時可以發(fā)貨
詢價
IXYS
24+
TO-247
1300
詢價
IXYS
23+
TO-3P
5000
原裝正品,假一罰十
詢價
IXYS/艾賽斯
24+
TO3P
58000
全新原廠原裝正品現(xiàn)貨,可提供技術支持、樣品免費!
詢價
IXYS/艾賽斯
23+
MODULE
10000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
24+
8866
詢價
IXYS
9536-
30
公司優(yōu)勢庫存 熱賣中!
詢價
IXYS/艾賽斯
TO-3P
22+
6000
十年配單,只做原裝
詢價
IXYS/艾賽斯
23+
TO-3P
6000
原裝正品,支持實單
詢價
更多IXTH10N60供應商 更新時間2025-2-22 9:00:00