首頁 >IXTQ180N055T>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

IXTQ180N055T

Trench Gate Power MOSFET

TrenchGatePowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTA180N055T

TrenchGatePowerMOSFET

TrenchGatePowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTP180N055T

TrenchGatePowerMOSFET

TrenchGatePowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

NP180N055TUJ

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP180N055TUJ

MOSFIELDEFFECTTRANSISTOR

Description TheNP180N055TUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance ?RDS(on)=2.3mΩMAX.(VGS=10V,ID=90A) ?LowCiss:Ciss=9500pFTYP.(VDS=25V) ?Designedforautomotiveapplicationand

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP180N055TUK

MOSFIELDEFFECTTRANSISTOR

Description TheNP180N055TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=1.40m?MAX.(VGS=10V,ID=90A) ?LowCiss:Ciss=10700pFTYP.(VDS=25V) ?Designedforautomotiveapplication

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP180N055TUK

MOSFIELDEFFECTTRANSISTOR

Description TheNP180N055TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=1.40mΩMAX.(VGS=10V,ID=90A) ?LowCiss:Ciss=10700pFTYP.(VDS=25V) ?Designedforautomotiveapplicati

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP180N055TUK

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數(shù)

  • 型號:

    IXTQ180N055T

  • 功能描述:

    MOSFET 180 Amps 55V 0.004 Ohm Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IXYS
24+
TO-247
2050
公司大量全新原裝 正品 隨時可以發(fā)貨
詢價
IXYS
1503+
TO-3P
3000
就找我吧!--邀您體驗愉快問購元件!
詢價
IXYS
22+
TO3P3 SC653
9000
原廠渠道,現(xiàn)貨配單
詢價
IXYS
21+
TO3P3 SC653
13880
公司只售原裝,支持實單
詢價
IXYS/艾賽斯
23+
TO-3P
6000
原裝正品,支持實單
詢價
IXYS
2022+
TO-3P-3,SC-65-3
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
詢價
IXYS/艾賽斯
22+
TO-3P
25000
只做原裝進口現(xiàn)貨,專注配單
詢價
IXYS
24+
TO-3P
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
IXYS
20+
TO-3P
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
更多IXTQ180N055T供應商 更新時間2025-1-3 9:01:00