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IXFC52N30P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=32A@TC=25℃ ·DrainSourceVoltage :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=75mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFC52N30P

PolarHTTMHiPerFETPowerMOSFET

IXYS

IXYS Corporation

IXFH52N30P

PolarHTPowerMOSFETHiPerFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackages ?Fastrecoverydiode ?Avalancherated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXFH52N30P

PowerMOSFETs

IXYS

IXYS Corporation

IXFH52N30P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=52A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=73mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH52N30Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=52A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=60mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH52N30Q

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowtLowGateChargeandCapacitances

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Avalanche

IXYS

IXYS Corporation

IXFK52N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=52A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.06Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK52N30Q

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowtLowGateChargeandCapacitances

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Avalanche

IXYS

IXYS Corporation

IXFT52N30Q

N-ChannelEnhancementModeAvalancheRated,Highdv/dt,LowtLowGateChargeandCapacitances

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features ?Lowgatecharge ?Internationalstandardpackages ?EpoxymeetUL94V-0,flammabilityclassification ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Avalanche

IXYS

IXYS Corporation

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
24+
N/A
56000
一級(jí)代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
IXYS/艾賽斯
23+
TO-3P
10000
公司只做原裝正品
 詢價(jià)
IXYS/艾賽斯
23+
TO3P
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
IXYS/艾賽斯
2022
TO3P
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
IXYS/艾賽斯
2022+
TO3P
57550
詢價(jià)
IXYS/艾賽斯
24+
TO3P
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!
 詢價(jià)
IXYS
24+
TO-3P
85
詢價(jià)
IXYS
1931+
N/A
2831
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
 詢價(jià)
IXYS
1809+
TO-3P
375
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
IXYS
22+
NA
2831
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
更多IXTQ52N30P-JSM供應(yīng)商 更新時(shí)間2025-2-5 11:06:00

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