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JANSR2N7406中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書
JANSR2N7406規(guī)格書詳情
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
Features
? 24A, 200V, rDS(ON) = 0.110?
? Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
? Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80 of Rated Breakdown and VGS of 10V Off-Bias
? Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80 BVDSS
- Typically Survives 2E12 if Current Limited to IDM
? Photo Current
- 12nA Per-RAD(Si)/s Typically
? Neutron
- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
MICROSEMI |
24+ |
SMD |
1680 |
MICROSEMI專營(yíng)品牌進(jìn)口原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
IR |
22+23+ |
BGA |
20413 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
IR |
1425 |
SMD |
56 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
HARRIS |
2023+ |
TO254AA |
3570 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價(jià) | ||
IR |
24+ |
TO-254 |
56000 |
公司進(jìn)口原裝現(xiàn)貨 批量特價(jià)支持 |
詢價(jià) | ||
HARRIS |
21+ |
TO254AA |
12588 |
原裝正品,自己庫(kù)存 假一罰十 |
詢價(jià) | ||
HARRIS |
2020+ |
TO254AA |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
IR |
23+ |
a |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
a |
7000 |
詢價(jià) | |||
IR |
22+ |
a |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) |
