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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
JANTX1N5711UB/TR	文件：100 bytes Page：1 Pages	包裝：散裝封裝/外殼：4-SMD，無(wú)引線類別：分立半導(dǎo)體產(chǎn)品二極管 - 整流器 - 單描述：DIODE SMALL-SIGNAL SCHOTTKY	MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司	Microchip
1N5711	文件：217.69 Kbytes Page：2 Pages	15mAAxialLeadedSchottkyBarrierDiodes Features ●Forgeneralpurposeapplications ●Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiodesfor fastswitc	SUNMATESUNMATE electronic Co., LTD 森美特森美特半導(dǎo)體股份有限公司	SUNMATE
1N5711	文件：273.845 Kbytes Page：2 Pages	SCHOTTKYBARRIERSWITCHINGDIODE	SUNMATESUNMATE electronic Co., LTD 森美特森美特半導(dǎo)體股份有限公司 PDF上傳者：深圳市福田區(qū)吉富昌電子商行	SUNMATE
1N5711	文件：498.37 Kbytes Page：3 Pages	GeneralPurposeAxialLeadGlassPackagedSchottkyDiodes DescriptionandApplications Thesesilicondiodesarepackagedinahermeticaxialleadglasspackage.Varioususesincludedetecting,mixingandswitchingatlowpowerlevels.Theyaresuitableforcommercialswitchingalongwithcontrolfunctionsinnarrowbandreceivers.Thesediodescanalso	MA-COM M/A-COM Technology Solutions, Inc.	MA-COM
1N5711	文件：264.7 Kbytes Page：7 Pages	PicoSecondSwitchingSpeed Description/Applications The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcostglasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logor	AVAGOAVAGO TECHNOLOGIES LIMITED 安華高	AVAGO
1N5711	文件：269.1 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODES VOLTAGERANGE:70VPOWERDISSIPATION:400mW FEATURES ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeiti	DSK Diode Semiconductor Korea	DSK
1N5711	文件：128.49 Kbytes Page：4 Pages	400mWattSmallSignalSchottkyDiode60to70Volts Features ?MoistureSensitivity:Level1perJ-STD-020C ?HighReverseBreakdownVoltage ?LowForwardVoltageDrop ?ForGeneralPurposeApplication ?Marking:Cathodebandandtypenumber ?LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation	MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司	MCC
1N5711	文件：124.62 Kbytes Page：1 Pages	SchottkyBarrierDiodesforGeneralPurposeApplications Description/Applications The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcostglasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logor	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
1N5711	文件：67.45 Kbytes Page：3 Pages	SCHOTTKYBARRIERDIODES DESCRIPTION ThisSchottkybarrierdiodeismetallurgicallybondedandoffersmilitarygradequalificationsforhigh-reliabilityapplicationson“1N”prefixednumbers.ThissmalldiodeishermeticallysealedandbondedintoaDO-35glasspackage. FEATURES ?JEDECregistered1N5711-1,1N5712-1,1	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N5711	文件：30.8 Kbytes Page：2 Pages	SCHOTTKYBARRIERDIODES VRRM:70V,60V FEATURES: ?Forgeneralpurposeapplications ?Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode	SYNSEMI SynSemi，Inc.	SYNSEMI
1N5711	文件：82.78 Kbytes Page：2 Pages	400mWattSmallSignalSchottkyDiode60to70Volts Features ?HighReverseBreakdownVoltage ?LowForwardVoltageDrop ?ForGeneralPurposeApplication	CHENYIShanghai Lunsure Electronic Tech 商朗電子上海商朗電子科技有限公司	CHENYI
1N5711	文件：36.02 Kbytes Page：2 Pages	SCHOTTKYBARRIERDIODES SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N5711	文件：55.97 Kbytes Page：2 Pages	SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N5711	文件：36.05 Kbytes Page：2 Pages	SCHOTTKYBARRIERDIODES VRRM:70V,60V FEATURES: ?Forgeneralpurposeapplications ?Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode	EIC EIC discrete Semiconductors	EIC
1N5711	文件：56.73 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODES FEATURES ?Forgeneralpurposeapplications ?Metal-on-siliconjunctionSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfastswitching makeitidealforprotectionofMOSdevices,steering,biasingand couplingdiodesforfast	JINANJINGHENGJinan Jingheng (Group) Co.,Ltd 晶恒集團(tuán)濟(jì)南晶恒電子有限責(zé)任公司	JINANJINGHENG
1N5711	文件：110.08 Kbytes Page：2 Pages	SchottkyBarrierSwitchingDiode Features ?MoistureSensitivity:Level1perJ-STD-020C ?HighReverseBreakdownVoltage ?LowForwardVoltageDrop ?ForGeneralPurposeApplication ?Marking:Cathodebandandtypenumber ?LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation	MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司	MCC
1N5711	文件：56.87 Kbytes Page：6 Pages	SchottkyBarrierDiodesforGeneralPurposeApplications Description The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcost glasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logorA-Dconv	HPAgilent(Hewlett-Packard) 安捷倫科技安捷倫科技有限公司	HP
1N5711	文件：46.24 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODES VOLTAGERANGE:70VPOWERDISSIPATION:400mW FEATURES ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeiti	BILINChangzhou Galaxy Century Microelectronics Co.,Ltd. 銀河微電常州銀河世紀(jì)微電子股份有限公司	BILIN
1N5711	文件：126.35 Kbytes Page：2 Pages	Small-SignalDiodeSchottkyDiodes Features ◆Forgeneralpurposeapplications ◆Metal-on-siliconSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfast switchingmakeitidealforprotectionofMOSdevices,steering, biasingandcouplingdiodesforfastswitching	Good-Ark GOOD-ARK Electronics	Good-Ark
1N5711	文件：99.85 Kbytes Page：2 Pages	SchottkyDiodes Features ?Forgeneralpurposeapplications ?Metal-on-siliconSchottkybarrierdevicewhichis protectedbyaPNjunctionguardring.Thelowfor wardvoltagedropandfastswitchingmakeitideal forprotectionofMOSdevices,steering,biasing andcouplingdiodesforfastswit	GE GE Industrial Company	GE

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產(chǎn)品屬性

產(chǎn)品編號(hào)：
JANTX1N5711UB/TR
制造商：
Microchip Technology
類別：
分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 單
系列：
Military, MIL-PRF-19500/444
包裝：
散裝
二極管類型：
肖特基
速度：
小信號(hào) =< 200mA（Io），任意速度
不同?Vr、F 時(shí)電容：
2pF @ 0V，1MHz
安裝類型：
表面貼裝型
封裝/外殼：
4-SMD，無(wú)引線
供應(yīng)商器件封裝：
UB
工作溫度 - 結(jié)：
-65°C ~ 150°C
描述：
DIODE SMALL-SIGNAL SCHOTTKY

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
現(xiàn)代芯城（深圳）科技有限公司	JANTX1N5711UB/TR		24+	N/A	56000	一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇	詢價(jià)
深圳市宏捷佳電子科技有限公司	JANTX1N5711UB/TR	Microchip Technology	24+	UB	9350	獨(dú)立分銷商公司只做原裝誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證	詢價(jià)
深圳市高捷芯城科技有限公司	JANTX1N5711UBCA	MICROCHIP(美國(guó)微芯)	23+		7350	現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!	詢價(jià)
瑞航達(dá)科技(深圳)有限公司	JANTX1N5711UBD	MICROSEMI			638	原裝正品	詢價(jià)
深圳市艾宇欣科技有限公司	JANTX1N5711UBD	Microsemi	1942+	N/A	908	加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物	詢價(jià)
深圳市科雨電子有限公司	JANTX1N5711UBD	MICROSEMI	1809+	SMD	26	就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!	詢價(jià)
深圳市華斯頓科技有限公司	JANTX1N5711UR-1	Microsemi	22+23+		12290	絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨	詢價(jià)
深圳市納立科技有限公司	JANTX1N5711UR-1	MICROSEMI	三年內(nèi)		1983	只做原裝正品	詢價(jià)
深圳市芯祺盛科技有限公司	JANTX1N5711UR-1	Microsemi/美高森美	1209+	DO-213AA	15	原裝進(jìn)口公司現(xiàn)貨	詢價(jià)
深圳市維爾達(dá)電子有限公司	JANTX1N5711UR-1	MICROSEMI	2023+	新	80000	一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品	詢價(jià)

更多JANTX1N5711UB/TR供應(yīng)商更新時(shí)間2025-1-14 11:06:00

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