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1N5711

SMALL SIGNAL SCHOTTKY DIODE

DESCRIPTION Metaltosiliconjunctiondiodefeaturinghighbreakdown,lowturn-onvoltageandultrafastswitching.PrimarlyintendedforhighlevelUHF/VHFdetectionandpulseapplicationwithbroaddynamicrange. Matchedbatchesareavailableonrequest.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

1N5711

SCHOTTKY BARRIER DIODES

?1N5711-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/444 ?1N5712-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/445 ?SCHOTTKYBARRIERDIODES ?HERMETICALLYSEALED ?METALLURGICALLYBONDED

CDI-DIODE

Compensated Deuices Incorporated

1N5711

SCHOTTKY BARRIER SWITCHING DIODE

Features ●Ultra-FastSwitchingSpeed ●HighReverseBreakdownVoltage ●LowForwardVoltageDrop ●GuardRingJunctionProtection

DIODES

Diodes Incorporated

1N5711

Schottky Diodes

Features ?Forgeneralpurposeapplications ?Metal-on-siliconSchottkybarrierdevicewhichis protectedbyaPNjunctionguardring.Thelowfor wardvoltagedropandfastswitchingmakeitideal forprotectionofMOSdevices,steering,biasing andcouplingdiodesforfastswit

GE

GE Industrial Company

1N5711

Schottky Barrier Diodes for General Purpose Applications

Description The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcost glasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logorA-Dconv

HPAgilent(Hewlett-Packard)

安捷倫科技安捷倫科技有限公司

1N5711

Schottky Barrier Switching Diode

Features ?MoistureSensitivity:Level1perJ-STD-020C ?HighReverseBreakdownVoltage ?LowForwardVoltageDrop ?ForGeneralPurposeApplication ?Marking:Cathodebandandtypenumber ?LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

1N5711

SCHOTTKY BARRIER DIODES

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5711

Small-Signal Diode Schottky Diodes

Features ◆Forgeneralpurposeapplications ◆Metal-on-siliconSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfast switchingmakeitidealforprotectionofMOSdevices,steering, biasingandcouplingdiodesforfastswitching

Good-Ark

GOOD-ARK Electronics

1N5711

SMALL SIGNAL SCHOTTKY DIODES

VOLTAGERANGE:70VPOWERDISSIPATION:400mW FEATURES ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeiti

BILINGalaxy Semi-Conductor Holdings Limited

世紀(jì)微電子常州銀河世紀(jì)微電子股份有限公司

1N5711

400 mWatt Small Signal Schottky Diode 60 to 70 Volts

Features ?HighReverseBreakdownVoltage ?LowForwardVoltageDrop ?ForGeneralPurposeApplication

CHENYIShanghai Lunsure Electronic Tech

商朗電子上海商朗電子科技有限公司

1N5711

SCHOTTKY BARRIER DIODES

VRRM:70V,60V FEATURES: ?Forgeneralpurposeapplications ?Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode

SYNSEMI

SynSemi，Inc.

1N5711

SMALL SIGNAL SCHOTTKY DIODES

FEATURES ?Forgeneralpurposeapplications ?Metal-on-siliconjunctionSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfastswitching makeitidealforprotectionofMOSdevices,steering,biasingand couplingdiodesforfast

JINANJINGHENGJinan Jingheng (Group) Co.,Ltd

晶恒集團(tuán)濟(jì)南晶恒電子有限責(zé)任公司

1N5711

SCHOTTKY BARRIER DIODES

VRRM:70V,60V FEATURES: ?Forgeneralpurposeapplications ?Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode

EIC

EIC discrete Semiconductors

1N5711

SCHOTTKY BARRIER DIODES LEADLESS PACKAGE FOR SURFACE MOUNT

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5711

SCHOTTKY BARRIER DIODES

DESCRIPTION ThisSchottkybarrierdiodeismetallurgicallybondedandoffersmilitarygradequalificationsforhigh-reliabilityapplicationson“1N”prefixednumbers.ThissmalldiodeishermeticallysealedandbondedintoaDO-35glasspackage. FEATURES ?JEDECregistered1N5711-1,1N5712-1,1

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5711

Schottky Barrier Diodes for General Purpose Applications

Description/Applications The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcostglasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

1N5711

400 mWatt Small Signal Schottky Diode 60 to 70 Volts

Features ?MoistureSensitivity:Level1perJ-STD-020C ?HighReverseBreakdownVoltage ?LowForwardVoltageDrop ?ForGeneralPurposeApplication ?Marking:Cathodebandandtypenumber ?LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

1N5711

15mA Axial Leaded Schottky Barrier Diodes

Features ●Forgeneralpurposeapplications ●Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiodesfor fastswitc

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

1N5711

Pico Second Switching Speed

Description/Applications The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcostglasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logor

AVAGOAVAGO TECHNOLOGIES LIMITED

安華高

1N5711

General Purpose Axial Lead Glass Packaged Schottky Diodes

DescriptionandApplications Thesesilicondiodesarepackagedinahermeticaxialleadglasspackage.Varioususesincludedetecting,mixingandswitchingatlowpowerlevels.Theyaresuitableforcommercialswitchingalongwithcontrolfunctionsinnarrowbandreceivers.Thesediodescanalso

MA-COM

M/A-COM Technology Solutions, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號：

    1N5711

  • 制造商：

    Broadcom Limited

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 二極管 - 射頻

  • 包裝：

    卷帶（TR）

  • 二極管類型：

    肖特基 - 單

  • 電壓 - 峰值反向（最大值）：

    70V

  • 不同?Vr、F 時電容：

    2pF @ 0V，1MHz

  • 工作溫度：

    -65°C ~ 200°C（TJ）

  • 封裝/外殼：

    DO-204AH，DO-35，軸向

  • 描述：

    RF DIODE SCHOTTKY 70V 250MW

供應(yīng)商型號品牌批號封裝庫存備注價格
STMicroelectronics
24+
DO-204AH,DO-35,軸向
30000
二極管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
ST(意法半導(dǎo)體)
23+
DO-35
10000
只做原裝現(xiàn)貨 假一賠萬
 詢價
ST
06+
二極管
635
原裝庫存有訂單來談優(yōu)勢
 詢價
Agilent
21+
VQFN
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價
ST
23+
二極管
16800
進(jìn)口原裝現(xiàn)貨
 詢價
ST
23+
二極管
50000
全新原裝現(xiàn)貨熱賣
 詢價
ST
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
ST
8000
原裝正品長期供貨，如假包賠包換 徐小姐13714450367
 詢價
ST
24+
DO-35
7500
詢價
ST
23+
二極管
5000
原裝正品,假一罰十
 詢價
更多1N5711供應(yīng)商 更新時間2024-10-27 14:14:00

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