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JCS12N50C

Low gate charge

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS12N50CC-O-C-N-B

Low gate charge

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS12N50FC-O-F-N-B

Lowgatecharge

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS12N50SC-O-S-N-A

Lowgatecharge

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS12N50SC-O-S-N-B

Lowgatecharge

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

MDF12N50

N-ChannelMOSFET500V,11.5A,0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF12N50B

N-ChannelMOSFET500V,11.5A,0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF12N50BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDF12N50BTH

N-ChannelMOSFET500V,11.5A,0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF12N50F

N-ChannelMOSFET500V,11.5A,0.75ohm

MGCHIP

MagnaChip Semiconductor.

MDF12N50FTH

N-ChannelMOSFET500V,11.5A,0.75ohm

MGCHIP

MagnaChip Semiconductor.

MDF12N50TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDF12N50TH

N-ChannelMOSFET500V,11.5A,0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP12N50

N-ChannelMOSFET500V,11.5A,0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP12N50B

N-ChannelMOSFET500V,11.5A,0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP12N50BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDP12N50BTH

N-ChannelMOSFET500V,11.5A,0.65(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP12N50F

N-ChannelMOSFET500V,11.5A,0.75ohm

MGCHIP

MagnaChip Semiconductor.

MDP12N50FTH

N-ChannelMOSFET500V,11.5A,0.75ohm

MGCHIP

MagnaChip Semiconductor.

MDP12N50TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
HUAWEI
23+
TO-220
10000
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SINO-MICRO
2022+
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32500
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S
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6000
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SINO-MICRO
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30000
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SINO-MICRO
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32500
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吉林華微
23+
TO220C
6000
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24+
N/A
67000
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HUAWEI
24+
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12300
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JSMC
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10000
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JSMC
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411
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更多JCS12N50C供應(yīng)商 更新時間2024-11-15 10:06:00