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首頁 >MDF12N50BTH>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
MDF12N50BTH	文件：322.07 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
MDF12N50BTH	文件：1.15511 Mbytes Page：8 Pages	N-Channel MOSFET 500V, 11.5A, 0.65(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDF12N50F	文件：1.38988 Mbytes Page：8 Pages	N-ChannelMOSFET500V,11.5A,0.75ohm	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDF12N50FTH	文件：1.38988 Mbytes Page：8 Pages	N-ChannelMOSFET500V,11.5A,0.75ohm	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDF12N50TH	文件：322.05 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
MDF12N50TH	文件：779.15 Kbytes Page：8 Pages	N-ChannelMOSFET500V,11.5A,0.65(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDP12N50	文件：772.67 Kbytes Page：6 Pages	N-ChannelMOSFET500V,11.5A,0.65(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDP12N50B	文件：1.15511 Mbytes Page：8 Pages	N-ChannelMOSFET500V,11.5A,0.65(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDP12N50BTH	文件：331.4 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
MDP12N50BTH	文件：1.15511 Mbytes Page：8 Pages	N-ChannelMOSFET500V,11.5A,0.65(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDP12N50F	文件：1.38988 Mbytes Page：8 Pages	N-ChannelMOSFET500V,11.5A,0.75ohm	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDP12N50FTH	文件：1.38988 Mbytes Page：8 Pages	N-ChannelMOSFET500V,11.5A,0.75ohm	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDP12N50TH	文件：331.38 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11.5A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
MDP12N50TH	文件：772.67 Kbytes Page：6 Pages	N-ChannelMOSFET500V,11.5A,0.65(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MSAER12N50A	文件：48.44 Kbytes Page：2 Pages	N-CHANNELENHANCEMENTMODEPOWERMOSFET Features ?Ultrafastrectifierinparallelwiththebodydiode(MSAEtypeonly) ?Ruggedpolysilicongatecellstructure ?IncreasedUnclampedInductiveSwitching(UIS)capability ?Hermeticallysealed,surfacemountpowerpackage ?Lowpackageinductance ?Verylowthermalresistance ?Rev	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
MSAFR12N50A	文件：48.44 Kbytes Page：2 Pages	N-CHANNELENHANCEMENTMODEPOWERMOSFET Features ?Ultrafastrectifierinparallelwiththebodydiode(MSAEtypeonly) ?Ruggedpolysilicongatecellstructure ?IncreasedUnclampedInductiveSwitching(UIS)capability ?Hermeticallysealed,surfacemountpowerpackage ?Lowpackageinductance ?Verylowthermalresistance ?Rev	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
SIHA12N50E	文件：173.49 Kbytes Page：8 Pages	ESeriesPowerMOSFET FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Lowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Computing	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
SIHA12N50E	文件：168.98 Kbytes Page：8 Pages	ESeriesPowerMOSFET FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Lowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Comput	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
SIHA12N50E	文件：319.73 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
SIHB12N50C	文件：274.74 Kbytes Page：13 Pages	PowerMOSFET FEATURES ?LowFigure-of-MeritRonxQg ?100AvalancheTested ?GateChargeImproved ?Trr/QrrImproved ?ComplianttoRoHSDirective2002/95/EC	VishayVishay Siliconix 威世科技威世科技半導體	Vishay

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供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市正邁科技有限公司	MDF12N50BTH	MAGNACHIP	23+	N-MOSFET/500V/11.5A/0.7	7124	正邁科技原裝現(xiàn)貨授權(quán)代理主營:IC電容.二三級管原裝	詢價
深圳市坤融電子科技有限公司	MDF12N50BTH	MAGNACHIP/美格納	24+	TO-220F	18	只做原廠渠道可追溯貨源	詢價
深圳宇航軍工半導體有限公司	MDF12N50BTH	美格納	19+	TO-220F	83709	原廠代理渠道,每一顆芯片都可追溯原廠；	詢價
中天科工半導體（深圳）有限公司	MDF12N50BTH	MAGNACHIP	20+	TO-220F	36900	原裝優(yōu)勢主營型號-可開原型號增稅票	詢價
深圳市拓億芯電子有限公司	MDF12N50BTH	MAGNACHIP/美格納	23+	TO-220F	30000	全新原裝現(xiàn)貨,價格優(yōu)勢	詢價
艾睿國際（香港）有限公司	MDF12N50BTH	MAGNACHIP/美格納	2021+	TO-220F	100500	一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨	詢價
深圳市振芯物聯(lián)科技有限公司	MDF12N50BTH	MAGNACHIP	22+	TO-220F	28600	只做原裝正品現(xiàn)貨假一賠十一級代理	詢價
深圳市國宇半導體科技有限公司	MDF12N50BTH	MAGNACHIP/美格納	23+	TO-220F	10000	公司只做原裝正品	詢價
深圳市威爾健半導體有限公司	MDF12N50BTH	MAGNACHIP/美格納	23+	TO-220F	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
深圳廊盛科技有限公司	MDF12N50BTH	MAGNACHIP/美格納	2022	TO-220F	80000	原裝現(xiàn)貨,OEM渠道,歡迎咨詢	詢價

更多MDF12N50BTH供應商更新時間2024-11-15 9:12:00

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