首頁(yè) >JCS8N60SB-O-S-N-B>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
Highfrequencyswitchingmodepowersupply APPLICATIONS 1.Highefficiencyswitchmodepowersupplies 2.Electroniclampballastsbasedonhalfbridge 3.UPS FEATURES 1.Lowgatecharge 2.LowCrss(typical23pF) 3.Fastswitching 4.100avalanchetested 5.Improveddv/dtcapability 6.RoHSproduct | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
Highfrequencyswitchingmodepowersupply APPLICATIONS 1.Highefficiencyswitchmodepowersupplies 2.Electroniclampballastsbasedonhalfbridge 3.UPS FEATURES 1.Lowgatecharge 2.LowCrss(typical23pF) 3.Fastswitching 4.100avalanchetested 5.Improveddv/dtcapability 6.RoHSproduct | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
N-CHANNELMOSFET APPLICATIONS 1.Highefficiencyswitchmodepowersupplies 2.Electroniclampballastsbasedonhalfbridge 3.UPS FEATURES 1.Lowgatecharge 2.LowCrss(typical23pF) 3.Fastswitching 4.100avalanchetested 5.Improveddv/dtcapability 6.RoHSproduct | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
Highfrequencyswitchingmodepowersupply APPLICATIONS 1.Highefficiencyswitchmodepowersupplies 2.Electroniclampballastsbasedonhalfbridge 3.UPS FEATURES 1.Lowgatecharge 2.LowCrss(typical23pF) 3.Fastswitching 4.100avalanchetested 5.Improveddv/dtcapability 6.RoHSproduct | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 華微電子吉林華微電子股份有限公司 | JSMC | ||
JJW | ||||
N-Channel650V(D-S)PowerMOSFET FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Serverandtelecompowersupplies ?Switchmodepowersupplies(SMPS) ?Powerfactorcorrection | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
N-Channel650V(D-S)PowerMOSFET FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Serverandtelecompowersupplies ?Switchmodepowersupplies(SMPS) ?Powerfactorcorrection | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
商品目錄MOS(場(chǎng)效應(yīng)管) 連續(xù)漏極電流(Id)(25°C時(shí))7.5A(Tc) 漏源電壓(Vdss)600V 柵源極閾值電壓4V@250uA 漏源導(dǎo)通電阻1.2Ω@3.75A,10V 類型N溝道 最大功率耗散(Ta)48W(Tc) | KIAKIA Semiconductor Technology 可易亞半導(dǎo)體廣東可易亞半導(dǎo)體科技有限公司 | KIA | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisSuperJunctionMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,I | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
iscN-ChannelMOSFETTransistor ?DESCRITION ?Suitableforactivepowerfactorcorrectionandswitchingmode Powersupplies ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.58? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perfor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisSuperJunctionMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,I | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
ThisSuperJunctionMOSFEThasbettercharacteristics | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
ThisSuperJunctionMOSFEThasbettercharacteristics | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
AdvancedhighcelldenitytrenchtechnologyforultraRDS | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
600VN-CHANNELMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Greendeviceavailable. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Lowgatecharge. | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
SINO-MICRO |
2022+ |
TO-263 |
50000 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
SINO-MICRO |
2022+ |
TO-263 |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價(jià) | ||
SINO-MICRO |
23+ |
TO-263 |
79999 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
HUAJING |
20+ |
TO-252 |
38900 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) | ||
HUAJING |
21+ |
TO-252 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
SINO |
23+ |
TO-220 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
Sino |
23+ |
TO-220 |
6000 |
原裝正品,支持實(shí)單 |
詢價(jià) | ||
infineon |
2023+ |
TO-220 |
80000 |
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) | ||
24+ |
N/A |
67000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
Sino |
24+ |
TO-TO-220 |
12300 |
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢價(jià) |
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