零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
N-CHANNELMOSFET N-CHANNELMOSFET QualifiedperMIL-PRF-19500/542 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
N-CHANNELMOSFET N-CHANNELMOSFET QualifiedperMIL-PRF-19500/542 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
N-ChannelPowerMOSFETs,5.5A,350V/400V Description Thesedevicesaren-channel,enchancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
VGSRatedat?20V DESCRIPTION ?VGSRatedat±20V ?SiliconGateforfastswitchingspeeds ?IDSS、RDS(ON),specifiedatelevatedtemperature ?Lowdrivereqirements APPLICATIONS designedforhighpower,highspeedapplication,suchasswitchingapplies,UPS,ACandDCmotorcontrols,relayandhighenergy | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
RepetitiveAvalancheRatings | IRF International Rectifier | IRF | ||
POWERMOSFETN-CHANNEL(BVdss=400V,Rds(on)=1.00ohm,Id=5.5A) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio | IRF International Rectifier | IRF | ||
TRANSISTORSN-CHANNEL(Vdss=400V,Rds(on)=1.00ohm,Id=5.5A) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio | IRF International Rectifier | IRF | ||
TRANSISTORSN-CHANNEL(Vdss=400V,Rds(on)=1.00ohm,Id=5.5A) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio | IRF International Rectifier | IRF | ||
POWERMOSFETN-CHANNEL(BVdss=400V,Rds(on)=1.00ohm,Id=5.5A) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio | IRF International Rectifier | IRF |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR/MOT |
24+ |
TO-3 |
850 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
MOTOROLA/摩托羅拉 |
專業(yè)鐵帽 |
TO-3 |
67500 |
鐵帽原裝主營-可開原型號增稅票 |
詢價 | ||
JTX2N6766 |
93 |
93 |
詢價 | ||||
HARRIS |
專業(yè)鐵帽 |
CAN3 |
1000 |
原裝鐵帽專營,代理渠道量大可訂貨 |
詢價 |
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