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EM6K6

Marking：K06；Package：EMT6；1.8V Drive NchNch MOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

EM6K6

Marking：K06；Package：EMT6；1.8V Drive NchNch MOSFET

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

AOK065V65X2

Marking：K065V65X2；Package：TO-247-3L；650V αSiC Silicon Carbide Power MOSFET

Features ?ProprietaryαSiCMOSFETtechnology ?Lowloss,fastswitchingspeedswithlowRG ?Optimizeddrivevoltage(VGS=15V) forbroaddrivercompatibility ?RobustbodydiodeandlowQrr Applications ?Renewable?Industrial ?EVCharger?UPS ?SolarInverters

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

TK063N60Z1

Marking：K063N60Z1；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.053Ω(typ.) (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=1.47mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK065N65Z

Marking：K065N65Z；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.054Ω(typ.) (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=1.69mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK065U65Z

Marking：K065U65Z；Package：TOLL；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.051Ω(typ.) (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=1.69mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK065Z65Z

Marking：K065Z65Z；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.054Ω(typ.) (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=1.69mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK068N65Z5

Marking：K068N65Z5；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=135ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.052Ω(typ.) (3)High-speedswitchingpropertieswiththelowercapacitance. (4)Enhancementmode:Vth=3.5to4.5V(VDS=10V,ID=1.6

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK068U65Z5

Marking：K068U65Z5；Package：TOLL；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Fastreverserecoverytime:trr=135ns(typ.) (2)Lowdrain-sourceon-resistance:RDS(ON)=0.052Ω(typ.) (3)High-speedswitchingpropertieswiththelowercapacitance. (4)Enhancementmode:Vth=3.5to4.5V(VDS=10V,ID=1.6

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

IKD06N65ET6

Marking：K06EET6；Package：PG-TO252-3；IGBT in trench and field-stop technology with soft, fast recovery anti-parallel Rapid diode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號：

    K06

  • 制造商：

    Panasonic Industrial Company

  • TRAYSUB：

    1B71961E

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24+
18123
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23+
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1005
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TO-263
5000
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CABLESFORLESS
新
6
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18+
SOP
200
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N/A
6000
面議
19
TDIP
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WESTCODE
24+
MODULE
2100
公司大量全新現(xiàn)貨 隨時可以發(fā)貨
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更多K06供應(yīng)商 更新時間2025-1-31 15:00:00

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