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DS110W

Marking：K110；Package：SOD-123FL；Surface Mount Schottky Barrier Rectifier

Features Metalsiliconjunction,majoritycarrierconduction Forsurfacemountedapplications Lowpowerloss,highefficiency Highforwardsurgecurrentcapability Foruseinlowvoltage,highfrequencyinverters, freewheeling,andpolarityprotectionapplications

UNSEMIUN Semiconducctor INC

優(yōu)恩半導體深圳市優(yōu)恩半導體有限公司

MBRS1100

Marking：K110；Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed: 250C/10seconds,0.375”(9.5mm)leadl

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

DS110W

Marking：K110；Package：SOD123FL；Surface Mount Schottky Barrier Rectifier

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風微電子廣東佑風微電子有限公司

TK110A10PL

Marking：K110A10PL；Package：TO-220SIS；MOSFETs Silicon N-channel MOS

Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators ?MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=9.3nC(typ.) (3)Smalloutputcharge:Qoss=32nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=9.1mΩ(typ.)(VGS=10V

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK110A65Z

Marking：K110A65Z；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.092Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=1.02mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK110E10PL

Marking：K110E10PL；Package：TO-220；MOSFETs Silicon N-channel MOS

Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators ?MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=9.3nC(typ.) (3)Smalloutputcharge:Qoss=32nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=9.0mΩ(typ.)(VGS=10V

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK110E65Z

Marking：K110E65Z；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.092Ω(typ.) (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=1.02mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK110N65Z

Marking：K110N65Z；Package：TO-247；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.092Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=1.02mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK110Z65Z

Marking：K110Z65Z；Package：TO-247-4L；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.092Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=1.02mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

KMB110J

Marking：K110J；Package：SOF2-4J；Surface Mount Schottky Bridge Rectifiers

JUXINGGuangdong Juxing Electronics Technology Co., Ltd.

廣東鉅興電子廣東鉅興電子科技有限公司

詳細參數(shù)

  • 型號：

    K110

  • 制造商：

    AEMC Instruments

  • 功能描述：

    CURRENT PROBE

  • 功能描述：

    CURRENT PROBE; Test Probe

  • Functions：

    Current; Accuracy

  • %：

    0.5%; For Use

  • With：

    Digital Multimeters, Oscilloscopes;

  • Accuracy：

    0.5% ;RoHS

  • Compliant：

    NA

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
24+
TSSOP-16P
400
詢價
INFINEON
23+
TSSOP-16P
7936
詢價
24+
SSOP
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
INF
23+
TSSOP-16
3500
優(yōu)勢庫存
 詢價
GW
SOD123FL
568923
提供BOM表配單只做原裝貨值得信賴
 詢價
TRR
2021+
DO214
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
PLINGSEMIC
23+
SOD-123FL
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
PLINGSEMIC
21+
SOD-123FL
10000
原裝現(xiàn)貨假一罰十
 詢價
PLINGSEMIC
2022
SOD-123FL
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
PLINGSEMIC
SOD-123FL
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
 詢價
更多K110供應(yīng)商 更新時間2025-1-31 13:30:00

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