DTA124G

Marking：K15；DIGITAL TRANSISTOR

Features 1)Built-InBiasingResistors,R1=R2=10kΩ 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuitdesigne

MBRS150

Marking：K15；Package：SOD-123FL；SCHOTTK Y BARRIER DIODE

Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed: 250C/10seconds,0.375”(9.5mm)leadl

DTA124GKA

Marking：K15；Package：SOT-346；-100mA / -50V Digital transistors (with built-in resistors)

DTA124GKA

Marking：K15；Package：SOT-346；Digital transistors (built-in resistor)

1.0SMB15A

Marking：K15A；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, epetitionrate(dutycycle):0.01%

1.0SMB15CA

Marking：K15C；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 1000Wpeakpulsepowercapabilityat10/1000μswaveform, epetitionrate(dutycycle):0.01%

2SK1529

Marking：K1529；Package：SC-65；N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)

High-PowerAmplifierApplication ●Highbreakdownvoltage:VDSS=180V ●Highforwardtransferadmittance:|Yfs|=4.0S(typ.) ●Complementaryto2SJ200

IKQ150N65EH7

Marking：K150EEH7；Package：PG-TO247-3-PLUS-NN3.7；High speed and low saturation voltage 650 V TRENCHSTOP? IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features ?VCE=650V ?IC=150A ?Lowswitchinglosses ?Verylowcollector-emittersaturationvoltageVCEsat ?Verysoft,fastrecoveryantiparalleldiode ?Smoothswitchingbehavior ?Humidityrobustness ?Optimizedforhardswitching,two-andthree-leveltopologies ?Completeprod

IKW15N120CS7

Marking：K15MCS7；Package：PG-TO247-3；Short circuit rugged 1200 V TRENCHSTOP? IGBT 7 technology

Shortcircuitrugged1200VTRENCHSTOP?IGBT7technologycopackedwithsoftandfastrecoveryEmitterControlled7diode Features ?VCE=1200V ?IC=15A ?IGBTco-packedwithfullcurrent,softandlowQrrdiode ?LowsaturationvoltageVCE(sat)=2.0VatTvj=175°C ?Optimizedforhard

IKY150N65EH7

Marking：K150EEH7；Package：PG-TO247-4-PLUS-NN5.1；High speed and low saturation voltage 650 V TRENCHSTOP? IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features ?VCE=650V ?IC=150A ?Lowswitchinglosses ?Verylowcollector-emittersaturationvoltageVCEsat ?Verysoft,fastrecoveryantiparalleldiode ?Smoothswitchingbehavior ?Humidityrobustness ?Optimizedforhardswitching,two-andthree-leveltopologies ?Completeprod