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K2057

Field Effect Transistor Silicon N Channel MOS Type

FieldEffectTransistor SiliconNChannelMOSType(π-MOSIV) HighSpeed,HighCurrentSwitchingApplications Features ●LowDrain-SourceONResistance -RDS(ON)=0.24Ω(Typ.) ●HighForwardTransferAmittnace -|Yfs|=15S(Typ.) ●LowLeakageCurrent -IDSS=-100μA(Max.)(VDS

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

K2078

Field Effect Transistor Silicon N Channel MOS Type

FieldEffectTransistor SiliconNChannelMOSType(π-MOSII.5) HighSpeed,HighCurrentSwitchingApplications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

K2098

N-channel MOS-FET

150V0,08?20A50W >Features -HighCurrent -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighForwardTransconductance -AvalancheProof >Applications -MotorControl -GeneralPurposePowerAmplifier -DC-DCconverters

FujiFuji Electric

富士電機(jī)富士電機(jī)株式會(huì)社

K20A60U

Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

SwitchingRegulatorApplications ?Lowdrain-sourceON-resistance:RDS(ON)=0.165Ω(typ.) ?Highforwardtransferadmittance:?Yfs?=12S(typ.) ?Lowleakagecurrent:IDSS=100μA(max)(VDS=600V) ?Enhancement-mode:Vth=3.0to5.0V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

K20A60W

MOSFETs Silicon N-Channel MOS

Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.13Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

K20G

First Aid Kit

Features: ComprehensivelystockedandcompliantwithHealth&Safetyregulations Availablefor1-10,11-20,21-50and50+Persons ShatterproofABScase Clearperspexcontentsdividers Rubberdust&moistureseal Sturdywallmountingbracket,clipsdirectlytocase

ETCList of Unclassifed Manufacturers

未分類制造商

K20P100M100SF2

Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz

Features ?OperatingCharacteristics –Voltagerange:1.71to3.6V –Flashwritevoltagerange:1.71to3.6V –Temperaturerange(ambient):-40to105°C ?Performance –Upto100MHzARMCortex-M4corewithDSPinstructionsdelivering1.25DhrystoneMIPSperMHz ?Memoriesand

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

K20P104M100SF2

K20 Sub-Family Data Sheet

Features ?OperatingCharacteristics –Voltagerange:1.71to3.6V –Flashwritevoltagerange:1.71to3.6V –Temperaturerange(ambient):-40to105°C ?Performance –Upto100MHzARMCortex-M4corewithDSPinstructionsdelivering1.25DhrystoneMIPSperMHz ?Memoriesand

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

K20P121M100SF2

Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz

Features ?OperatingCharacteristics –Voltagerange:1.71to3.6V –Flashwritevoltagerange:1.71to3.6V –Temperaturerange(ambient):-40to105°C ?Performance –Upto100MHzARMCortex-M4corewithDSPinstructionsdelivering1.25DhrystoneMIPSperMHz ?Memoriesand

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

K20P121M100SF2

K20 Sub-Family

Features ?OperatingCharacteristics –Voltagerange:1.71to3.6V –Flashwritevoltagerange:1.71to3.6V –Temperaturerange(ambient):-40to105°C ?Performance –Upto100MHzARMCortex-M4corewithDSPinstructionsdelivering1.25DhrystoneMIPSperMHz ?Memoriesand

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    K20

  • 功能描述：

    罩類、盒類及殼類產(chǎn)品 8-1/4x4-1/2x1-3/8(0.791cf)18Cmprtmnts

  • RoHS：

    否

  • 制造商：

    Bud Industries

  • 產(chǎn)品：

    Boxes

  • 外部深度：

    6.35 mm

  • 外部寬度：

    6.35 mm

  • 外部高度：

    2.56 mm NEMA

  • 額定值：

    IP

  • 材料：

    Acrylonitrile Butadiene Styrene(ABS)

  • 顏色：

    Red

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TECCOR
08+
DO-214AA
90000
絕對(duì)全新原裝強(qiáng)調(diào)只做全新原裝現(xiàn)
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TECCOR
24+
500
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SUNMATE(森美特)
2019+ROHS
SMB/DO-214AA
66688
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原廠
23+
TO-220F
5000
原裝正品,假一罰十
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Littelfuse
23+
DO-15X
6680
全新原裝優(yōu)勢(shì)
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NEC
16+
TO-202
10000
全新原裝現(xiàn)貨
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LITTLEFUSE
24+
DO-214
4820
只做原裝正品
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LITTELFUSE
24+
NA
5825
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
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TECCOR
24+
DO-15X
5000
只做原裝公司現(xiàn)貨
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NEC
2020+
TO-202
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存
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更多K20供應(yīng)商 更新時(shí)間2025-4-6 9:16:00

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