首頁 >K4B4G1646Q-HC>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
K4B4G1646Q-HC | PRODUCT SELECTION GUIDE Displays, Memory and Storage Samsungcontinuestoleadtheindustrywiththebroadestportfolioofmemoryproductsand displaytechnology.Itsdisplaypanels,DRAM,flash,mobileandgraphicsmemoryarefoundinmany computers–fromultrabookstopowerfulservers–andinawiderangeofhandhelddevicessuch assmartphon | SamsungSamsung semiconductor 三星三星半導體 | Samsung | |
4GbB-dieDDR3SDRAMOlnyx16 The4GbDDR3SDRAMB-dieisorganizedasa32Mbitx16I/Osx8banks,device.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto2133Mb/sec/pin(DDR3-2133)forgeneralapplications. KeyFeatures ?JEDECstandard1.5V(1.425V~1.575V) ?VDDQ=1.5V(1.425V~1.575V) | SamsungSamsung semiconductor 三星三星半導體 | Samsung | ||
DDR3SDRAMMemory | SamsungSamsung semiconductor 三星三星半導體 | Samsung | ||
4GbB-dieDDR3SDRAMOlnyx16 The4GbDDR3SDRAMB-dieisorganizedasa32Mbitx16I/Osx8banks,device.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto2133Mb/sec/pin(DDR3-2133)forgeneralapplications. KeyFeatures ?JEDECstandard1.5V(1.425V~1.575V) ?VDDQ=1.5V(1.425V~1.575V) | SamsungSamsung semiconductor 三星三星半導體 | Samsung | ||
4GbB-dieDDR3SDRAMOlnyx16 The4GbDDR3SDRAMB-dieisorganizedasa32Mbitx16I/Osx8banks,device.Thissynchronousdeviceachieveshighspeeddouble-data-ratetransferratesofupto2133Mb/sec/pin(DDR3-2133)forgeneralapplications. KeyFeatures ?JEDECstandard1.5V(1.425V~1.575V) ?VDDQ=1.5V(1.425V~1.575V) | SamsungSamsung semiconductor 三星三星半導體 | Samsung | ||
PRODUCTSELECTIONGUIDEDisplays,MemoryandStorage Samsungcontinuestoleadtheindustrywiththebroadestportfolioofmemoryproductsand displaytechnology.Itsdisplaypanels,DRAM,flash,mobileandgraphicsmemoryarefoundinmany computers–fromultrabookstopowerfulservers–andinawiderangeofhandhelddevicessuch assmartphon | SamsungSamsung semiconductor 三星三星半導體 | Samsung | ||
4GbE-dieDDR3LSDRAM | SamsungSamsung semiconductor 三星三星半導體 | Samsung | ||
4GbE-dieDDR3LSDRAM | SamsungSamsung semiconductor 三星三星半導體 | Samsung | ||
4GbE-dieDDR3LSDRAM | SamsungSamsung semiconductor 三星三星半導體 | Samsung | ||
4GbQ-dieDDR3LSDRAMOlnyx1696FBGAwithLead-Free&Halogen-Free(RoHScompliant)1.35V | SamsungSamsung semiconductor 三星三星半導體 | Samsung |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
sunsung |
17+ |
NA |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
SAMSANG |
19+ |
BGA |
256800 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價 | ||
sunsung |
2017+ |
SMD |
12000 |
原廠/代理渠道價格優(yōu)勢 |
詢價 | ||
SAMSUNG |
1844+ |
BGA |
6528 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 | ||
SAMSUNG/三星 |
22+ |
BGA |
20000 |
原裝正品現(xiàn)貨 |
詢價 | ||
SAMSUNG |
22+ |
FBGA |
10000 |
原裝正品優(yōu)勢現(xiàn)貨供應 |
詢價 | ||
SAMSUNG |
2023+ |
FBGA |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
SAMSUNG |
20+ |
BGA |
65300 |
一級代理/放心購買! |
詢價 | ||
SAMSUNG/三星 |
23+ |
BGA |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
SAMSUNG/三星 |
21+ |
BGA |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 |
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