首頁(yè) >K4E661612B>規(guī)格書列表

零件編號(hào)下載&訂購(gòu)功能描述制造商&上傳企業(yè)LOGO

K4E661612B

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E661612B-L

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E661612B-TC

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E661612C

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E661612C-L

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E661612C-T

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E661612C-TC

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E661612D

CMOSDRAM

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    K4E661612B

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    4M x 16bit CMOS Dynamic RAM with Extended Data Out

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SAMSUNG
24+
BGA
1172
詢價(jià)
SAMSANG
19+
BGA
256800
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
SAMSUNG
24+
BGA
2140
全新原裝!現(xiàn)貨特價(jià)供應(yīng)
 詢價(jià)
SAMSUNG
23+
BGA
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
6000
面議
19
DIP/SMD
 詢價(jià)
SAMSUNG/三星
2021+
BGA
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
SAMSUNG/三星
19+
BGA
12501
進(jìn)口原裝現(xiàn)貨
 詢價(jià)
SAMSUNG/三星
23+
BGA
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
SAMSUNG/三星
21+
BGA
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
SAMSUNG/三星
2022
BGA
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
更多K4E661612B供應(yīng)商 更新時(shí)間2025-1-19 13:30:00

相關(guān)規(guī)格書

更多

相關(guān)庫(kù)存

更多