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K4E661612D

CMOS DRAM

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E661612B

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E661612B-L

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E661612B-TC

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E661612C

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E661612C-L

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E661612C-T

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4E661612C-TC

4Mx16bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof4,194,304x16bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalf

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細參數(shù)

  • 型號：

    K4E661612D

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    CMOS DRAM

供應(yīng)商型號品牌批號封裝庫存備注價格
SAMSUNG
15+
TSSOP54
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
 詢價
TSOP-II
16+
SOP16
4000
進口原裝現(xiàn)貨/價格優(yōu)勢!
 詢價
SAMSUNG
TSOP50
0110+
1813
全新原裝進口自己庫存優(yōu)勢
 詢價
SAMSUNG
2016+
TSOP50
6528
只做進口原裝現(xiàn)貨!或訂貨,假一賠十!
 詢價
SAMSUNG
24+
TSSOP
472
詢價
SAMSUNG
23+
TSSOP
8890
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價
NSC
22+
2250
100%全新原裝公司現(xiàn)貨供應(yīng)!隨時可發(fā)貨
 詢價
SAMSUNG
17+
TSOP50
9988
只做原裝進口,自己庫存
 詢價
SAMSANG
19+
TSOP50
256800
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
TSOP-II
23+
Samsung
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
更多K4E661612D供應(yīng)商 更新時間2024-11-15 11:04:00

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