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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
K4H511638	文件：212.57 Kbytes Page：24 Pages	512Mb C-die DDR SDRAM Specification	SamsungSamsung semiconductor 三星三星半導體	Samsung
K4H511638A-TCA0	文件：669.27 Kbytes Page：53 Pages	128Mb DDR SDRAM Features ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?DLLalignsDQandDQStransitionwithCKtransition ?MRScyclewithaddresskeyprograms -.Readlatency2,2.5(	SamsungSamsung semiconductor 三星三星半導體	Samsung
K4H511638A-TCA2	文件：669.27 Kbytes Page：53 Pages	128Mb DDR SDRAM Features ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?DLLalignsDQandDQStransitionwithCKtransition ?MRScyclewithaddresskeyprograms -.Readlatency2,2.5(	SamsungSamsung semiconductor 三星三星半導體	Samsung
K4H511638A-TCB0	文件：669.27 Kbytes Page：53 Pages	128Mb DDR SDRAM Features ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?DLLalignsDQandDQStransitionwithCKtransition ?MRScyclewithaddresskeyprograms -.Readlatency2,2.5(	SamsungSamsung semiconductor 三星三星半導體	Samsung
K4H511638A-TLA0	文件：669.27 Kbytes Page：53 Pages	128Mb DDR SDRAM Features ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?DLLalignsDQandDQStransitionwithCKtransition ?MRScyclewithaddresskeyprograms -.Readlatency2,2.5(	SamsungSamsung semiconductor 三星三星半導體	Samsung
K4H511638A-TLA2	文件：669.27 Kbytes Page：53 Pages	128Mb DDR SDRAM Features ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?DLLalignsDQandDQStransitionwithCKtransition ?MRScyclewithaddresskeyprograms -.Readlatency2,2.5(	SamsungSamsung semiconductor 三星三星半導體	Samsung
K4H511638A-TLB0	文件：669.27 Kbytes Page：53 Pages	128Mb DDR SDRAM Features ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?DLLalignsDQandDQStransitionwithCKtransition ?MRScyclewithaddresskeyprograms -.Readlatency2,2.5(	SamsungSamsung semiconductor 三星三星半導體	Samsung
K4H511638B-TC/LA2	文件：332.33 Kbytes Page：24 Pages	512Mb B-die DDR SDRAM Specification KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Differentialcl	SamsungSamsung semiconductor 三星三星半導體	Samsung
K4H511638B-TC/LB0	文件：332.33 Kbytes Page：24 Pages	512Mb B-die DDR SDRAM Specification KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Differentialcl	SamsungSamsung semiconductor 三星三星半導體	Samsung
K4H511638B-TC/LB3	文件：332.33 Kbytes Page：24 Pages	512Mb B-die DDR SDRAM Specification KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Differentialcl	SamsungSamsung semiconductor 三星三星半導體	Samsung
K4H511638B-TC/LCC	文件：332.33 Kbytes Page：24 Pages	512Mb B-die DDR SDRAM Specification KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Differentialcl	SamsungSamsung semiconductor 三星三星半導體	Samsung
K4H511638B-TCA0	文件：669.27 Kbytes Page：53 Pages	128Mb DDR SDRAM Features ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?DLLalignsDQandDQStransitionwithCKtransition ?MRScyclewithaddresskeyprograms -.Readlatency2,2.5(	SamsungSamsung semiconductor 三星三星半導體	Samsung
K4H511638B-TCA2	文件：669.27 Kbytes Page：53 Pages	128Mb DDR SDRAM Features ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?DLLalignsDQandDQStransitionwithCKtransition ?MRScyclewithaddresskeyprograms -.Readlatency2,2.5(	SamsungSamsung semiconductor 三星三星半導體	Samsung
K4H511638B-TCB0	文件：669.27 Kbytes Page：53 Pages	128Mb DDR SDRAM Features ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?DLLalignsDQandDQStransitionwithCKtransition ?MRScyclewithaddresskeyprograms -.Readlatency2,2.5(	SamsungSamsung semiconductor 三星三星半導體	Samsung
K4H511638B-TLA0	文件：669.27 Kbytes Page：53 Pages	128Mb DDR SDRAM Features ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?DLLalignsDQandDQStransitionwithCKtransition ?MRScyclewithaddresskeyprograms -.Readlatency2,2.5(	SamsungSamsung semiconductor 三星三星半導體	Samsung
K4H511638B-TLA2	文件：669.27 Kbytes Page：53 Pages	128Mb DDR SDRAM Features ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?DLLalignsDQandDQStransitionwithCKtransition ?MRScyclewithaddresskeyprograms -.Readlatency2,2.5(	SamsungSamsung semiconductor 三星三星半導體	Samsung
K4H511638B-TLB0	文件：669.27 Kbytes Page：53 Pages	128Mb DDR SDRAM Features ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?DLLalignsDQandDQStransitionwithCKtransition ?MRScyclewithaddresskeyprograms -.Readlatency2,2.5(	SamsungSamsung semiconductor 三星三星半導體	Samsung
K4H511638B-UC/LA2	文件：332.33 Kbytes Page：24 Pages	512Mb B-die DDR SDRAM Specification KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Differentialcl	SamsungSamsung semiconductor 三星三星半導體	Samsung
K4H511638B-UC/LB0	文件：332.33 Kbytes Page：24 Pages	512Mb B-die DDR SDRAM Specification KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Differentialcl	SamsungSamsung semiconductor 三星三星半導體	Samsung
K4H511638B-UC/LB3	文件：332.33 Kbytes Page：24 Pages	512Mb B-die DDR SDRAM Specification KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Differentialcl	SamsungSamsung semiconductor 三星三星半導體	Samsung

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詳細參數(shù)

型號：
K4H511638
制造商：
SAMSUNG
制造商全稱：
Samsung semiconductor
功能描述：
512Mb C-die DDR SDRAM Specification

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市澳億芯電子科技有限公司	K4H511638	SAM	12+	TSOP	5000	優(yōu)勢	詢價
深圳市昌和盛利電子有限公司	K4H511638D-UCB3	SAMSUNG	23+	TSOP	18689		詢價
深圳市毅創(chuàng)騰電子科技有限公司	K4H511638F-LCCC	SAMSUN	23+	TSOP	5500	現(xiàn)貨,全新原裝	詢價
深圳市恒創(chuàng)達實業(yè)有限公司	K4H511638F-LCB3	SAMSUNG	17+	TSOP	6200	100%原裝正品現(xiàn)貨	詢價
深圳市勤思達科技有限公司	K4H511638C-UCB3	SAMSUNG	12+	TSOP54	100000	全新原裝,公司大量現(xiàn)貨,絕對正品供應(yīng)	詢價
深圳市卓越微芯電子有限公司	K4H511638J-LCCC	SAMSUNG	2020+	TSOP66	109	百分百原裝正品真實公司現(xiàn)貨庫存本公司只做原裝可	詢價
深圳市佳鑫美電子科技有限公司	K4H511638D-UCCC	SAMSUNG	22+	TSOP	4650		詢價
深圳市益百分電子有限公司	K4H511638C-ZCCC	SAMSUNG	06+	BGA	3600	全新原裝進口自己庫存優(yōu)勢	詢價
深圳市一線半導體有限公司	K4H511638D-UCB3	SAMSUNG	24+	TSOP	162		詢價
深圳市歐立現(xiàn)代科技有限公司	K4H511638C-UCB3	SAMSUNG	24+	TSOP	6980	原裝現(xiàn)貨,可開13%稅票	詢價

更多K4H511638供應(yīng)商更新時間2024-11-16 10:12:00

詳細參數(shù)

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