K4H511638D-UCSLASHLB0中文資料三星數(shù)據(jù)手冊(cè)PDF規(guī)格書

Key Features

? VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333

? VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400

? Double-data-rate architecture; two data transfers per clock cycle

? Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)

? Four banks operation

? Differential clock inputs(CK and CK)

? DLL aligns DQ and DQS transition with CK transition

? MRS cycle with address key programs

-. Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)

-. Burst length (2, 4, 8)

-. Burst type (sequential & interleave)

? All inputs except data & DM are sampled at the positive going edge of the system clock(CK)

? Data I/O transactions on both edges of data strobe

? Edge aligned data output, center aligned data input

? LDM,UDM for write masking only (x16)

? DM for write masking only (x4, x8)

? Auto & Self refresh

? 7.8us refresh interval(8K/64ms refresh)

? Maximum burst refresh cycle : 8

? 66pin TSOP II Pb-Free package

? RoHS compliant