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K4S560432B

256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL

GENERALDESCRIPTION TheK4S560432Bis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,785,216wordsby4bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560432B-TC/L1H

256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL

GENERALDESCRIPTION TheK4S560432Bis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,785,216wordsby4bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560432B-TC/L1L

256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL

GENERALDESCRIPTION TheK4S560432Bis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,785,216wordsby4bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560432B-TC/L75

256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL

GENERALDESCRIPTION TheK4S560432Bis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,785,216wordsby4bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560432D

16Mx4bitx4BanksSynchronousDRAMLVTTL

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560432E-NC

256MbE-dieSDRAMSpecification54pinsTSOP-II

GENERALDESCRIPTION TheK4S560432E/K4S560832Eis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththe

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560432E-TC

256MbE-dieSDRAMSpecification

GENERALDESCRIPTION TheK4S560432E/K4S560832E/K4S561632Eis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560432E-UC

256MbE-dieSDRAMSpecification54TSOP-IIwithPb-Free(RoHScompliant)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560432H

SDRAMProductGuide

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560432J

256MbJ-dieSDRAMSpecification

GeneralDescription TheK4S560432J/K4S560832J/K4S561632Jis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560432J

SDRAMProductGuide

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560432J

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560432N

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    K4S560432B

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SAMSANG
19+
TSOP54
256800
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
sam
23+
NA
686
專做原裝正品,假一罰百!
 詢價(jià)
SAMSUNG
6000
面議
19
TSOP
 詢價(jià)
Samsung
2022+
662
全新原裝 貨期兩周
 詢價(jià)
SAMSUNG
2023+
TSOP
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
SAMSUNG
21+
TSOP
35200
一級(jí)代理/放心采購(gòu)
 詢價(jià)
SAMSUGN
20+
N/A
8800
只做原裝正品
 詢價(jià)
SAMSCNG
22+
TSOP
32350
原裝正品 假一罰十 公司現(xiàn)貨
 詢價(jià)
SAMSUNG/三星
23+
TSOP54
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
SAMSUNG/三星
21+
TSOP54
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
更多K4S560432B供應(yīng)商 更新時(shí)間2024-11-18 9:28:00

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