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K4S560432E-TC

256Mb E-die SDRAM Specification

GENERALDESCRIPTION TheK4S560432E/K4S560832E/K4S561632Eis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560432E-TC75

256Mb E-die SDRAM Specification

GENERALDESCRIPTION TheK4S560432E/K4S560832E/K4S561632Eis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560432A

256MbitSDRAM16Mx4bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S560432Ais268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,785,216wordsby4bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560432B

256MbitSDRAM16Mx4bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S560432Bis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,785,216wordsby4bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560432D

16Mx4bitx4BanksSynchronousDRAMLVTTL

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560432E-NC

256MbE-dieSDRAMSpecification54pinsTSOP-II

GENERALDESCRIPTION TheK4S560432E/K4S560832Eis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththe

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560432E-UC

256MbE-dieSDRAMSpecification54TSOP-IIwithPb-Free(RoHScompliant)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560432H

SDRAMProductGuide

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560432J

256MbJ-dieSDRAMSpecification

GeneralDescription TheK4S560432J/K4S560832J/K4S561632Jis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560432J

SDRAMProductGuide

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    K4S560432E-TC

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    256Mb E-die SDRAM Specification

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SAMSUNG
05+
TSOP
2145
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
 詢價(jià)
SAMSUNG
2016+
TSOP54
5562
只做進(jìn)口原裝現(xiàn)貨!或訂貨!假一賠十!
 詢價(jià)
SAMSUNG
23+
SSOP
8890
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來(lái)電查詢
 詢價(jià)
SAMSUNG
23+
SOIC8
5000
原裝正品,假一罰十
 詢價(jià)
SAMSUNG
24+
TSOP
200
原裝現(xiàn)貨假一罰十
 詢價(jià)
SAMSUNG
24+
SSOP
762
詢價(jià)
SAMSUNG
16+
BGA
4000
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!
 詢價(jià)
SAMSUNG
17+
TSOP
9988
只做原裝進(jìn)口,自己庫(kù)存
 詢價(jià)
SAMSANG
19+
TSSOP
256800
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
SAM
23+
NA
12000
全新原裝假一賠十
 詢價(jià)
更多K4S560432E-TC供應(yīng)商 更新時(shí)間2025-2-22 9:30:00

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