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K4S643232C

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG￠shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung semiconductor

三星三星半導體

K4S643232C-TC/L10

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG￠shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung semiconductor

三星三星半導體

K4S643232C-TC/L55

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG￠shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung semiconductor

三星三星半導體

K4S643232C-TC/L60

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG￠shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung semiconductor

三星三星半導體

K4S643232C-TC/L70

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG￠shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung semiconductor

三星三星半導體

K4S643232C-TC/L80

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG￠shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung semiconductor

三星三星半導體

K4S643232C-TC10

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG￠shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung semiconductor

三星三星半導體

K4S643232C-TC55

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG￠shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung semiconductor

三星三星半導體

K4S643232C-TC60

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG￠shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung semiconductor

三星三星半導體

K4S643232C-TC70

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG￠shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung semiconductor

三星三星半導體

K4S643232C-TC80

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG￠shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung semiconductor

三星三星半導體

K4S643232C-TL10

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG￠shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung semiconductor

三星三星半導體

K4S643232C-TL55

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG￠shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung semiconductor

三星三星半導體

K4S643232C-TL60

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG￠shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung semiconductor

三星三星半導體

K4S643232C-TL70

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG￠shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung semiconductor

三星三星半導體

K4S643232C-TL80

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

GENERALDESCRIPTION TheK4S643232Cis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG￠shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarepo

SamsungSamsung semiconductor

三星三星半導體

K4S643232H

64Mb H-die (x32) SDRAM Specification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung semiconductor

三星三星半導體

K4S643232H-TC/L50

64Mb H-die (x32) SDRAM Specification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung semiconductor

三星三星半導體

K4S643232H-TC/L50

64Mb H-die (x32) SDRAM Specification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung semiconductor

三星三星半導體

K4S643232H-TC/L55

64Mb H-die (x32) SDRAM Specification

GENERALDESCRIPTION TheK4S643232His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsare

SamsungSamsung semiconductor

三星三星半導體

詳細參數(shù)

  • 型號：

    K4S643232

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

供應商型號品牌批號封裝庫存備注價格
SAMSUNG
23+
65480
詢價
SAMSUNG
24+
TSSOP-86
4650
詢價
SAMSUNG
23+
TSOP
6200
特價庫存
 詢價
SAMSUNG
22+
TSOP
2000
原裝正品現(xiàn)貨
 詢價
SAMSUNG
6000
面議
19
DIP/SMD
 詢價
SAMSUNG
24+
TSOP
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
SAMSUNG
2022
TSOP
5000
全新原裝現(xiàn)貨
 詢價
SAMSUNG/三星
23+
TSOP
5000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
SAMSUNG
23+24
TSOP-
9680
原盒原標.進口原裝.支持實單 .價格優(yōu)勢
 詢價
SAMSUNG
2016+
TSOP
2600
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
更多K4S643232供應商 更新時間2025-1-15 15:26:00

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