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K4T1G084QQ-HCE7中文資料三星數(shù)據(jù)手冊PDF規(guī)格書
K4T1G084QQ-HCE7規(guī)格書詳情
The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications.
Key Features
? JEDEC standard 1.8V ± 0.1V Power Supply
? VDDQ = 1.8V ± 0.1V
? 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
? 8 Banks
? Posted CAS
? Programmable CAS Latency: 3, 4, 5, 6
? Programmable Additive Latency: 0, 1, 2, 3, 4, 5
? Write Latency(WL) = Read Latency(RL) -1
? Burst Length: 4 , 8(Interleave/nibble sequential)
? Programmable Sequential / Interleave Burst Mode
? Bi-directional Differential Data-Strobe (Single-ended data strobe is an optional feature)
? Off-Chip Driver(OCD) Impedance Adjustment
? On Die Termination
? Special Function Support
- PASR(Partial Array Self Refresh)
- 50ohm ODT
- High Temperature Self-Refresh rate enable
? Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C
? All of Lead-free products are compliant for RoHS
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
22+ |
BGA |
20000 |
原裝正品現(xiàn)貨 |
詢價(jià) | ||
SAMSUNG |
17+ |
BGA |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
SAMSUNG/三星 |
22+ |
BGA |
9000 |
原裝正品 |
詢價(jià) | ||
SAMSUNG/三星 |
22+ |
HSOP10 |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實(shí)單! |
詢價(jià) | ||
SAMSUNG |
21+ |
BGA |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價(jià) | ||
SAMSUNG |
2020+ |
FBGA60 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
SAMSUNG |
存儲(chǔ)器 |
BGA |
40329 |
SAMSUNG原裝存儲(chǔ)芯片-誠信為本 |
詢價(jià) | ||
SAMSUNG/三星 |
23+ |
13000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種 |
詢價(jià) | |||
SAMSUNG |
ROHS |
56520 |
一級代理 原裝正品假一罰十價(jià)格優(yōu)勢長期供貨 |
詢價(jià) | |||
SAMSANG |
19+ |
BGA |
256800 |
原廠代理渠道,每一顆芯片都可追溯原廠； |
詢價(jià) |
