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K4X56163PI-LFE/GC3

16Mx16 Mobile DDR SDRAM

FEATURES ?VDD/VDDQ=1.8V/1.8V ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?MRScyclewithaddresskeyprograms -CASLatency(2,3) -BurstLength(2,4,8,16

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4X56163PI-LFE/GC6

16Mx16 Mobile DDR SDRAM

FEATURES ?VDD/VDDQ=1.8V/1.8V ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?MRScyclewithaddresskeyprograms -CASLatency(2,3) -BurstLength(2,4,8,16

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4X56163PE

16Mx16MobileDDRSDRAM

FEATURES ?1.8Vpowersupply,1.8VI/Opower ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?MRScyclewithaddresskeyprograms -CASLatency(3) -BurstLength(2

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4X56163PE-LFG

16Mx16MobileDDRSDRAM

FEATURES ?1.8Vpowersupply,1.8VI/Opower ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?MRScyclewithaddresskeyprograms -CASLatency(3) -BurstLength(2

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4X56163PE-LG

16Mx16MobileDDRSDRAM

FEATURES ?1.8Vpowersupply,1.8VI/Opower ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?MRScyclewithaddresskeyprograms -CASLatency(3) -BurstLength(2

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4X56163PG

16Mx16Mobile-DDRSDRAM

FEATURES ?1.8Vpowersupply,1.8VI/Opower ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?MRScyclewithaddresskeyprograms -CASLatency(2,3) -BurstLength

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4X56163P-L

16Mx16MobileDDRSDRAM

FEATURES ?VDD/VDDQ=1.8V/1.8V ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?MRScyclewithaddresskeyprograms -CASLatency(2,3) -BurstLength(2,4,8,16

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    K4X56163PI

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    16Mx16 Mobile DDR SDRAM

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SAMSUNG/三星
23+
BGA
3000
一級(jí)代理原廠VIP渠道,專注軍工、汽車(chē)、醫(yī)療、工業(yè)、
 詢價(jià)
BGA
286
詢價(jià)
SAMSUNG
2023+
BGA
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
SAMSUNG
21+
BGA
35200
一級(jí)代理/放心采購(gòu)
 詢價(jià)
SAMSUNG/三星
21+
60FBGA
20000
只做正品原裝現(xiàn)貨
 詢價(jià)
SAMSUNG/三星
2021+
BGA
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
SAMSUNG/三星
19+
BGA
6790
進(jìn)口原裝現(xiàn)貨
 詢價(jià)
samusng
2022
BGA
5280
原廠原裝正品,價(jià)格超越代理
 詢價(jià)
SAMSUNG
23+
BGA
8890
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來(lái)電查詢
 詢價(jià)
SAMSUNG
12+
BGA
1
詢價(jià)
更多K4X56163PI供應(yīng)商 更新時(shí)間2024-11-17 11:10:00

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