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K9F1208U0B-D中文資料三星數(shù)據(jù)手冊PDF規(guī)格書

K9F1208U0B-D
廠商型號

K9F1208U0B-D

功能描述

64M x 8 Bit NAND Flash Memory

文件大小

767.01 Kbytes

頁面數(shù)量

45

生產(chǎn)廠商 Samsung semiconductor
企業(yè)簡稱

Samsung三星

中文名稱

三星半導(dǎo)體官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-9 23:00:00

K9F1208U0B-D規(guī)格書詳情

GENERAL DESCRIPTION

Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1208X0B¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES

? Voltage Supply

- 1.8V device(K9F1208Q0B) : 1.70~1.95V

- 2.65V device(K9F1208D0B) : 2.4~2.9V

- 3.3V device(K9F1208U0B) : 2.7 ~ 3.6 V

? Organization

- Memory Cell Array : (64M + 2048K)bit x 8 bit

- Data Register : (512 + 16)bit x 8bit

? Automatic Program and Erase

- Page Program : (512 + 16)Byte

- Block Erase : (16K + 512)Byte

? Page Read Operation

- Page Size : (512 + 16)Byte

- Random Access : 15ms(Max.)

- Serial Page Access : 50ns(Min.)

? Fast Write Cycle Time

- Program time : 200ms(Typ.)

- Block Erase Time : 2ms(Typ.)

? Command/Address/Data Multiplexed I/O Port

? Hardware Data Protection

- Program/Erase Lockout During Power Transitions

? Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

? Command Register Operation

? Intelligent Copy-Back

? Unique ID for Copyright Protection

? Package

- K9F1208X0B-YCB0/YIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F1208X0B-GCB0/GIB0

63- Ball FBGA (8.5 x 13 , 1.0 mm width)

- K9F1208U0B-VCB0/VIB0

48 - Pin WSOP I (12X17X0.7mm)

- K9F1208X0B-PCB0/PIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package

- K9F1208X0B-JCB0/JIB0

63- Ball FBGA - Pb-free Package

- K9F1208U0B-FCB0/FIB0

48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package

* K9F1208U0B-V,F(WSOPI ) is the same device as K9F1208U0B-Y,P(TSOP1) except package type.

產(chǎn)品屬性

  • 型號:

    K9F1208U0B-D

  • 制造商:

    SAMSUNG

  • 制造商全稱:

    Samsung semiconductor

  • 功能描述:

    64M x 8 Bit NAND Flash Memory

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
SAMSUNG/三星
19+
BGA
12690
進口原裝現(xiàn)貨
詢價
SAMSUNG/三星
23+
NA/
3589
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
詢價
SAMSUNG
2016+
BGA
6000
公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
詢價
SAMSUNG
2020+
BGA
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
SAMSUNG
23+
BGA
20000
原廠原裝正品現(xiàn)貨
詢價
SAMSUNG
22+
BGA
10000
原裝正品優(yōu)勢現(xiàn)貨供應(yīng)
詢價
SAMSUNG/三星
2022
TSOP
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
SAMSUNG/三星
07+
TSSOP64x8NandFlash
880000
明嘉萊只做原裝正品現(xiàn)貨
詢價
SM
23+
65480
詢價
SAMSUNG/三星
21+
BGA
3823
原裝現(xiàn)貨假一賠十
詢價