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K9F1208U0B-D中文資料三星數(shù)據(jù)手冊(cè)PDF規(guī)格書

K9F1208U0B-D
廠商型號(hào)

K9F1208U0B-D

功能描述

64M x 8 Bit NAND Flash Memory

文件大小

767.01 Kbytes

頁(yè)面數(shù)量

45 頁(yè)

生產(chǎn)廠商 Samsung semiconductor
企業(yè)簡(jiǎn)稱

Samsung三星

中文名稱

三星半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2024-11-9 10:30:00

K9F1208U0B-D規(guī)格書詳情

GENERAL DESCRIPTION

Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1208X0B¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES

? Voltage Supply

- 1.8V device(K9F1208Q0B) : 1.70~1.95V

- 2.65V device(K9F1208D0B) : 2.4~2.9V

- 3.3V device(K9F1208U0B) : 2.7 ~ 3.6 V

? Organization

- Memory Cell Array : (64M + 2048K)bit x 8 bit

- Data Register : (512 + 16)bit x 8bit

? Automatic Program and Erase

- Page Program : (512 + 16)Byte

- Block Erase : (16K + 512)Byte

? Page Read Operation

- Page Size : (512 + 16)Byte

- Random Access : 15ms(Max.)

- Serial Page Access : 50ns(Min.)

? Fast Write Cycle Time

- Program time : 200ms(Typ.)

- Block Erase Time : 2ms(Typ.)

? Command/Address/Data Multiplexed I/O Port

? Hardware Data Protection

- Program/Erase Lockout During Power Transitions

? Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

? Command Register Operation

? Intelligent Copy-Back

? Unique ID for Copyright Protection

? Package

- K9F1208X0B-YCB0/YIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F1208X0B-GCB0/GIB0

63- Ball FBGA (8.5 x 13 , 1.0 mm width)

- K9F1208U0B-VCB0/VIB0

48 - Pin WSOP I (12X17X0.7mm)

- K9F1208X0B-PCB0/PIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package

- K9F1208X0B-JCB0/JIB0

63- Ball FBGA - Pb-free Package

- K9F1208U0B-FCB0/FIB0

48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package

* K9F1208U0B-V,F(WSOPI ) is the same device as K9F1208U0B-Y,P(TSOP1) except package type.

產(chǎn)品屬性

  • 型號(hào):

    K9F1208U0B-D

  • 制造商:

    SAMSUNG

  • 制造商全稱:

    Samsung semiconductor

  • 功能描述:

    64M x 8 Bit NAND Flash Memory

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
SAMSUNG/三星
23+
NA/
3589
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
詢價(jià)
SAMSUMG
24+
TSOP
5000
只做原裝公司現(xiàn)貨
詢價(jià)
SAMSUNG/三星
20+
BGA
2800
絕對(duì)全新原裝現(xiàn)貨,歡迎來(lái)電查詢
詢價(jià)
SAMSUNG/三星
TSOP
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
詢價(jià)
SAMSUNG
22+
TSOP
8000
原裝正品支持實(shí)單
詢價(jià)
SAMSUMG
21+
TSOP
10000
原裝現(xiàn)貨假一罰十
詢價(jià)
SAMSUNG/三星
07+
TSOP
20
原包裝原標(biāo)現(xiàn)貨,假一罰十,
詢價(jià)
SAMSUNG/三星
23+
TSOP
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
SAMSUNG/三星
2310+
TSOP
3689
優(yōu)勢(shì)代理渠道,原裝現(xiàn)貨,可全系列訂貨
詢價(jià)
SAMSUNG
2016+
BGA
6523
只做進(jìn)口原裝現(xiàn)貨!或訂貨假一賠十!
詢價(jià)