首頁>K9F1G08Q0M>規(guī)格書詳情

K9F1G08Q0M中文資料三星數(shù)據(jù)手冊PDF規(guī)格書

K9F1G08Q0M
廠商型號

K9F1G08Q0M

功能描述

128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

文件大小

729.28 Kbytes

頁面數(shù)量

40

生產(chǎn)廠商 Samsung semiconductor
企業(yè)簡稱

Samsung三星

中文名稱

三星半導體官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-9 20:00:00

K9F1G08Q0M規(guī)格書詳情

GENERAL DESCRIPTION

Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112-byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 50ns(1.8V device : 80ns) cycle time per byte(X8 device) or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margin ing of data. Even the write-intensive systems can take advantage of the K9F1GXXX0M¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1GXXX0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES

· Voltage Supply

-1.8V device(K9F1GXXQ0M): 1.70V~1.95V

- 2.65V device(K9F1GXXD0M) : 2.4~2.9V

-3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V

· Organization

- Memory Cell Array

-X8 device(K9F1G08X0M) : (128M + 4,096K)bit x 8bit

-X16 device(K9F1G16X0M) : (64M + 2,048K)bit x 16bit

- Data Register

-X8 device(K9F1G08X0M): (2K + 64)bit x8bit

-X16 device(K9F1G16X0M): (1K + 32)bit x16bit

- Cache Register

-X8 device(K9F1G08X0M): (2K + 64)bit x8bit

-X16 device(K9F1G16X0M): (1K + 32)bit x16bit

· Automatic Program and Erase

- Page Program

-X8 device(K9F1G08X0M): (2K + 64)Byte

-X16 device(K9F1G16X0M): (1K + 32)Word

- Block Erase

-X8 device(K9F1G08X0M): (128K + 4K)Byte

-X16 device(K9F1G16X0M): (64K + 2K)Word

· Page Read Operation

- Page Size

- X8 device(K9F1G08X0M): 2K-Byte

- X16 device(K9F1G16X0M) : 1K-Word

- Random Read : 25ms(Max.)

- Serial Access : 50ns(Min.)*

*K9F1GXXQ0M : 80ns

· Fast Write Cycle Time

- Program time : 300ms(Typ.)

- Block Erase Time : 2ms(Typ.)

· Command/Address/Data Multiplexed I/O Port

· Hardware Data Protection

- Program/Erase Lockout During Power Transitions

· Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

· Command Register Operation

· Cache Program Operation for High Performance Program

· Power-On Auto-Read Operation

· Intelligent Copy-Back Operation

· Unique ID for Copyright Protection

· Package :

- K9F1GXXX0M-YCB0/YIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F1G08U0M-VCB0/VIB0

48 - Pin WSOP I (12X17X0.7mm)

- K9F1GXXX0M-PCB0/PIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package

- K9F1G08U0M-FCB0/FIB0

48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package

* K9F1G08U0M-V,F(WSOPI ) is the same device as

K9F1G08U0M-Y,P(TSOP1) except package type.

產(chǎn)品屬性

  • 型號:

    K9F1G08Q0M

  • 制造商:

    SAMSUNG

  • 制造商全稱:

    Samsung semiconductor

  • 功能描述:

    128M x 8 Bit/64M x 16 Bit NAND Flash Memory

供應商 型號 品牌 批號 封裝 庫存 備注 價格
SAMSUNG/三星
23+
NA/
107
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價
SAMSUNG
2006
FBGA63
6062
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
SAMSUNG
23+
BGA
20000
原廠原裝正品現(xiàn)貨
詢價
SAMSUNG/三星
22+
BGA
3900
原裝優(yōu)勢!公司現(xiàn)貨供應!
詢價
SAMSUNG
22+
BGA
10000
原裝正品優(yōu)勢現(xiàn)貨供應
詢價
SAMSUNG/三星
2022
BGA
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
SAMSUNG/三星
22+
BGA
9000
原裝正品
詢價
SAMSUNG
22+23+
BGA
19856
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
SAMSUNG/三星
BGA
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
詢價
SAMSUNG
2022+
TSOP
20000
只做原裝進口現(xiàn)貨.假一罰十
詢價