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K9F1G08D0M中文資料三星數(shù)據(jù)手冊PDF規(guī)格書

K9F1G08D0M
廠商型號

K9F1G08D0M

功能描述

128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

文件大小

729.28 Kbytes

頁面數(shù)量

40

生產(chǎn)廠商 Samsung semiconductor
企業(yè)簡稱

Samsung三星

中文名稱

三星半導(dǎo)體官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-10 14:28:00

K9F1G08D0M規(guī)格書詳情

GENERAL DESCRIPTION

Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112-byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 50ns(1.8V device : 80ns) cycle time per byte(X8 device) or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margin ing of data. Even the write-intensive systems can take advantage of the K9F1GXXX0M¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1GXXX0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES

· Voltage Supply

-1.8V device(K9F1GXXQ0M): 1.70V~1.95V

- 2.65V device(K9F1GXXD0M) : 2.4~2.9V

-3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V

· Organization

- Memory Cell Array

-X8 device(K9F1G08X0M) : (128M + 4,096K)bit x 8bit

-X16 device(K9F1G16X0M) : (64M + 2,048K)bit x 16bit

- Data Register

-X8 device(K9F1G08X0M): (2K + 64)bit x8bit

-X16 device(K9F1G16X0M): (1K + 32)bit x16bit

- Cache Register

-X8 device(K9F1G08X0M): (2K + 64)bit x8bit

-X16 device(K9F1G16X0M): (1K + 32)bit x16bit

· Automatic Program and Erase

- Page Program

-X8 device(K9F1G08X0M): (2K + 64)Byte

-X16 device(K9F1G16X0M): (1K + 32)Word

- Block Erase

-X8 device(K9F1G08X0M): (128K + 4K)Byte

-X16 device(K9F1G16X0M): (64K + 2K)Word

· Page Read Operation

- Page Size

- X8 device(K9F1G08X0M): 2K-Byte

- X16 device(K9F1G16X0M) : 1K-Word

- Random Read : 25ms(Max.)

- Serial Access : 50ns(Min.)*

*K9F1GXXQ0M : 80ns

· Fast Write Cycle Time

- Program time : 300ms(Typ.)

- Block Erase Time : 2ms(Typ.)

· Command/Address/Data Multiplexed I/O Port

· Hardware Data Protection

- Program/Erase Lockout During Power Transitions

· Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

· Command Register Operation

· Cache Program Operation for High Performance Program

· Power-On Auto-Read Operation

· Intelligent Copy-Back Operation

· Unique ID for Copyright Protection

· Package :

- K9F1GXXX0M-YCB0/YIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F1G08U0M-VCB0/VIB0

48 - Pin WSOP I (12X17X0.7mm)

- K9F1GXXX0M-PCB0/PIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package

- K9F1G08U0M-FCB0/FIB0

48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package

* K9F1G08U0M-V,F(WSOPI ) is the same device as

K9F1G08U0M-Y,P(TSOP1) except package type.

產(chǎn)品屬性

  • 型號:

    K9F1G08D0M

  • 制造商:

    SAMSUNG

  • 制造商全稱:

    Samsung semiconductor

  • 功能描述:

    128M x 8 Bit/64M x 16 Bit NAND Flash Memory

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
SAMSUNG
23+
BGA
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
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6000
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19
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1902+
TSOP48
2734
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19+
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256800
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80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
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SAMSUNG
22+
原廠原封
6000
全新原裝現(xiàn)貨!自家?guī)齑?
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SAMSUNG/三星
22+
BGA
9000
原裝正品
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一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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SAMSUNG
24+
FBGA63
35200
一級代理/放心采購
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68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
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