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K9F1208U0B-Y中文資料三星數(shù)據(jù)手冊PDF規(guī)格書

K9F1208U0B-Y
廠商型號

K9F1208U0B-Y

功能描述

64M x 8 Bit NAND Flash Memory

文件大小

767.01 Kbytes

頁面數(shù)量

45

生產(chǎn)廠商 Samsung semiconductor
企業(yè)簡稱

Samsung三星

中文名稱

三星半導(dǎo)體官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-24 23:21:00

K9F1208U0B-Y規(guī)格書詳情

GENERAL DESCRIPTION

Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1208X0B¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES

? Voltage Supply

- 1.8V device(K9F1208Q0B) : 1.70~1.95V

- 2.65V device(K9F1208D0B) : 2.4~2.9V

- 3.3V device(K9F1208U0B) : 2.7 ~ 3.6 V

? Organization

- Memory Cell Array : (64M + 2048K)bit x 8 bit

- Data Register : (512 + 16)bit x 8bit

? Automatic Program and Erase

- Page Program : (512 + 16)Byte

- Block Erase : (16K + 512)Byte

? Page Read Operation

- Page Size : (512 + 16)Byte

- Random Access : 15ms(Max.)

- Serial Page Access : 50ns(Min.)

? Fast Write Cycle Time

- Program time : 200ms(Typ.)

- Block Erase Time : 2ms(Typ.)

? Command/Address/Data Multiplexed I/O Port

? Hardware Data Protection

- Program/Erase Lockout During Power Transitions

? Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

? Command Register Operation

? Intelligent Copy-Back

? Unique ID for Copyright Protection

? Package

- K9F1208X0B-YCB0/YIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F1208X0B-GCB0/GIB0

63- Ball FBGA (8.5 x 13 , 1.0 mm width)

- K9F1208U0B-VCB0/VIB0

48 - Pin WSOP I (12X17X0.7mm)

- K9F1208X0B-PCB0/PIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package

- K9F1208X0B-JCB0/JIB0

63- Ball FBGA - Pb-free Package

- K9F1208U0B-FCB0/FIB0

48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package

* K9F1208U0B-V,F(WSOPI ) is the same device as K9F1208U0B-Y,P(TSOP1) except package type.

產(chǎn)品屬性

  • 型號:

    K9F1208U0B-Y

  • 制造商:

    SAMSUNG

  • 制造商全稱:

    Samsung semiconductor

  • 功能描述:

    64M x 8 Bit NAND Flash Memory

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
SAMSUNG
24+
TSOP48
35200
一級代理/放心采購
詢價
SAMSUNG/三星
23+
NA/
3266
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
詢價
SAMSUNG
2016+
BGA
7534
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價
AKM
2020+
TSSOP48
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價
SAMSUNG
23+
BGA
20000
原廠原裝正品現(xiàn)貨
詢價
SAMSUNG
589220
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量
詢價
SAMSUNG
23+
TSOP48
3000
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售
詢價
SAMSUNG
BGA
7534
正品原裝--自家現(xiàn)貨-實(shí)單可談
詢價
SAMSANG
19+
TSOP-48
256800
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價
SAMSUNG
18+
TSOP
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
詢價