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K9F1208U0C-J中文資料三星數(shù)據(jù)手冊(cè)PDF規(guī)格書

廠商型號(hào) |
K9F1208U0C-J |
功能描述 | FLASH MEMORY |
文件大小 |
685.65 Kbytes |
頁(yè)面數(shù)量 |
38 頁(yè) |
生產(chǎn)廠商 | Samsung semiconductor |
企業(yè)簡(jiǎn)稱 |
SAMSUNG【三星】 |
中文名稱 | 三星半導(dǎo)體官網(wǎng) |
原廠標(biāo)識(shí) | ![]() |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-5-29 9:30:00 |
人工找貨 | K9F1208U0C-J價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
K9F1208U0C-J規(guī)格書詳情
GENERAL DESCRIPTION
Offered in 64Mx8bits, the K9F1208X0C is 512Mbit with spare 16Mbit capacity. The device is offered in 1.8V, 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200μs on the 528-bytes and an erase operation can be performed in typical 2ms on a 16K-bytes block. Data in the page can be read out at 42ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input.
FEATURES
?Voltage Supply
- 1.8V Device(K9F1208R0C) : 1.65V ~ 1.95V
- 2.7V Device(K9F1208B0C) : 2.5V ~ 2.9V
- 3.3V Device(K9F1208U0C) : 2.7V ~ 3.6V
?Organization
- Memory Cell Array : (64M + 2M) x 8bits
- Data Register : (512 + 16) x 8bits
?Automatic Program and Erase
- Page Program : (512 + 16) x 8bits
- Block Erase : (16K + 512)Bytes
?Page Read Operation
- Page Size : (512 + 16)Bytes
- Random Access : 15μs(Max.)
- Serial Page Access : 42ns(Min.)
?Fast Write Cycle Time
- Program time : 200μs(Typ.)
- Block Erase Time : 2ms(Typ.)
?Command/Address/Data Multiplexed I/O Port
?Hardware Data Protection
- Program/Erase Lockout During Power Transitions
?Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles (with 1bit/512Byte ECC)
- Data Retention : 10 Years
?Command Register Operation
?Unique ID for Copyright Protection
?Package
- K9F1208U0C-PCB0/PIB0 : Pb-Free Package 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1208X0C-JCB0/JIB0: Pb-Free Package 63-Ball FBGA(8.5 x 13 x 1.2mmt)
- K9F1208B0C-PCB0/PIB0 : Pb-Free Package 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
產(chǎn)品屬性
- 型號(hào):
K9F1208U0C-J
- 制造商:
SAMSUNG
- 制造商全稱:
Samsung semiconductor
- 功能描述:
FLASH MEMORY
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
ROHS |
8560 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢價(jià) | |||
SAMSANG |
19+ |
BGA |
256800 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價(jià) | ||
SAMSUNG/三星 |
24+ |
NA/ |
861 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
SAMSUNG |
24+ |
TSOP |
100000 |
專營(yíng)DDR內(nèi)存芯片原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
SAMSUNG/三星 |
24+ |
BGA |
18500 |
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價(jià)銷售 |
詢價(jià) | ||
SAMSUNG |
24+ |
BGA |
15000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
SAMSUNG |
三年內(nèi) |
1983 |
只做原裝正品 |
詢價(jià) | |||
SAMSUNG |
BGA |
7534 |
正品原裝--自家現(xiàn)貨-實(shí)單可談 |
詢價(jià) | |||
SAMSUNG/三星 |
11+ |
BGA |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
SAMSUNG |
2023+ |
5800 |
進(jìn)口原裝,現(xiàn)貨熱賣 |
詢價(jià) |