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KF3N60D

N CHANNEL MOS FIELD EFFECT TRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=2.3A ?D

KECKEC CORPORATION

KEC株式會(huì)社

KF3N60D

N CHANNEL MOS FIELD EFFECT TRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=2.3A ?D

KECKEC CORPORATION

KEC株式會(huì)社

KF3N60D

Power MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

KF3N60D/I

N CHANNEL MOS FIELD EFFECT TRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=2.3A ?D

KECKEC CORPORATION

KEC株式會(huì)社

KF3N60DI

N CHANNEL MOS FIELD EFFECT TRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=2.3A ?D

KECKEC CORPORATION

KEC株式會(huì)社

KF3N60D_15

N CHANNEL MOS FIELD EFFECT TRANSISTOR

KECKEC CORPORATION

KEC株式會(huì)社

KF3N60F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=3A ?Dra

KECKEC CORPORATION

KEC株式會(huì)社

KF3N60F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=3A ?Dra

KECKEC CORPORATION

KEC株式會(huì)社

KF3N60I

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=2.3A ?D

KECKEC CORPORATION

KEC株式會(huì)社

KF3N60I

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=2.3A ?D

KECKEC CORPORATION

KEC株式會(huì)社

KF3N60P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=3A ?Dra

KECKEC CORPORATION

KEC株式會(huì)社

KF3N60P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=3A ?Dra

KECKEC CORPORATION

KEC株式會(huì)社

KF3N60P/F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=3A ?Dra

KECKEC CORPORATION

KEC株式會(huì)社

KF3N60PF

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=3A ?Dra

KECKEC CORPORATION

KEC株式會(huì)社

KSM3N60

AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON)

KERSEMI

Kersemi Electronic Co., Ltd.

KSM3N60C

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMB3N60

ThisN-channelMOSFETSuseadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge.Itcanbeusedinawidevarietyofapplications.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMD3N60

Excellentpackageforgoodheatdissipation.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMD3N60C

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF3N60

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號(hào):

    KF3N60D

  • 制造商:

    KEC

  • 制造商全稱:

    KEC(Korea Electronics)

  • 功能描述:

    N CHANNEL MOS FIELD EFFECT TRANSISTOR

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K
23+
TO-252
10000
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KEC
2022+
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32000
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K
23+
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6000
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KEC
23+
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89630
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K
22+
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25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
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2322+
NA
33220
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KEC
23+
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8000
只做原裝現(xiàn)貨
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K
24+
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12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
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KEC
23+
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50000
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KEC
2022
TO-252
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
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更多KF3N60D供應(yīng)商 更新時(shí)間2024-12-23 10:06:00