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KIT-BB830+ZW

ABB830SolderlessPlug-inBreadBoardwithZW-MM-10ZipWireMale-to-Maleunzippablewires

Features: ?830tiepointstotal:630tie-pointIC-circuit areaplustwo100tie-pointdistribution stripsproviding4powerrails. ?WhiteABSplasticbodywithblackprinted legend.Colorlegendondistributionstrips. ?ContactsarePhosphorBronzewithPlated NickelFinish,ratedfor50

BUSBOARD

BusBoard Prototype Systems Ltd.

KRC830E

EPITAXIALPLANARNPNTRANSISTOR(SWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT)

SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION. FEATURES ●WithBuilt-inBiasResistors. ●SimplifyCircuitDesign. ●ReduceaQuantityofPartsandManufacturingProcess. ●HighPackingDensity.

KECKEC CORPORATION

KEC株式會社

KRC830U

EPITAXIALPLANARNPNTRANSISTOR(SWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT)

SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION. FEATURES ●WithBuilt-inBiasResistors. ●SimplifyCircuitDesign. ●ReduceaQuantityofPartsandManufacturingProcess. ●HighPackingDensity.

KECKEC CORPORATION

KEC株式會社

KSM830

AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON)

KERSEMI

Kersemi Electronic Co., Ltd.

KSMB830

Excellentpackageforgoodheatdissipation.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF830

Greendeviceavailable.

KERSEMI

Kersemi Electronic Co., Ltd.

KT830

SLOTTEDOPTICALSWITCHESPHOTOTRANSISTOROUTPUT

Optek

OPTEK Technologies

LED830

BlueLEDLamp

ROITHNER

Roithner LaserTechnik GmbH

LS830

ULTRALOWLEAKAGELOWDRIFTMONOLITHICDUALN-CHANNELJFET

FEATURES ULTRALOWDRIFT│ΔVGS1-2/ΔT│=5μV/oCmax. ULTRALOWNOISEIG=80fATYP. LOWNOISEen=70nV/√HzTYP. LOWCAPACITANCECISS=3pfmax.

LINEAR

Linear Integrated Systems

LS830

LinearSystemsUltraLowLeakageLowDriftMonolithicDualJFET

TheLS830isahigh-performancemonolithicdualJFETfeaturingextremelylownoise,tightoffsetvoltageandlowdriftovertemperaturespecifications,andistargetedforuseinawiderangeofprecisioninstrumentationapplications.TheLS830featuresa5-mVoffsetand10-μV/°Cdrift.The8Pin

MICROSS

Micross Components

LS830_PDIP

LinearSystemsUltraLowLeakageLowDriftMonolithicDualJFET

TheLS830isahigh-performancemonolithicdualJFETfeaturingextremelylownoise,tightoffsetvoltageandlowdriftovertemperaturespecifications,andistargetedforuseinawiderangeofprecisioninstrumentationapplications.TheLS830featuresa5-mVoffsetand10-μV/°Cdrift.The8Pin

MICROSS

Micross Components

LT830

PhotoDMOS-FETRelay

Description TheLT830isa1-FormAsolidstaterelayinan6pinDIPpackagethatemploysoptically coupledMOSFETtechnologytoprovide3750Vofinputtooutputisolation.The opticallycoupledinputiscontrolledbyahighlyefficientGaAlAsinfraredLEDand MOSFETsontheoutputside. Fe

LETEXLETEX technology corp

臺灣麗太麗太科技股份有限公司

M830

12.249Gb/sOC-192Clock&DataRecoveryTransmitterModule

ICSTChina Resources Microelectronics Limited Limited

華潤微電子華潤微電子有限公司

M830D

12.249Gb/sOC-192Clock&DataRecoveryTransmitterModule

ICSTChina Resources Microelectronics Limited Limited

華潤微電子華潤微電子有限公司

MANO830

PCIExpressMiniCardsupported

AXIOMTEKAxiomtek Co., Ltd.

艾訊科技艾訊股份有限公司

MAX830

5V/3.3V/3V/Adjustable-Output,1A,Step-Down,PWM,Switch-ModeDC-DCRegulators

GeneralDescription TheMAX830/MAX831/MAX832/MAX833aremonolithic,bipolar,pulse-width-modulation(PWM),switch-mode,stepdownDC-DCregulators.Eachisratedat1A.Veryfewexternalcomponentsareneededforstandardoperationbecausethepowerswitch,oscillator,feedback,andcontrolcircui

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX830CWE

5V/3.3V/3V/Adjustable-Output,1A,Step-Down,PWM,Switch-ModeDC-DCRegulators

GeneralDescription TheMAX830/MAX831/MAX832/MAX833aremonolithic,bipolar,pulse-width-modulation(PWM),switch-mode,stepdownDC-DCregulators.Eachisratedat1A.Veryfewexternalcomponentsareneededforstandardoperationbecausethepowerswitch,oscillator,feedback,andcontrolcircui

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MBR830

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

DIODES

Diodes Incorporated

MBR830

WideTemperatureRangeandHighTjmSchottkyBarrierRectifiers

FEATURES *Metalofsiliconrectifier,majoritycarrierconducton *Guardringfortransientprotection *Lowpowerloss,highefficiency *Highcurrentcapability,lowVF *Highsurgecapacity *Foruseinlowvoltage,highfrequencyinverters,free whelling,andpolarityprotectionapp

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

MBR830

SCHOTTKYBARRIERRECTIFIER

VOLTAGERANGE:30-100VCURRENT:8.0A FEATURES ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Guard

BILINGalaxy Semi-Conductor Holdings Limited

世紀(jì)微電子常州銀河世紀(jì)微電子股份有限公司

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KIA
24+
TO-252
5000
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KIA
21+
TO220
19000
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KIA
2022+
TO-252
10039
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KIA
2022+
TO-252
30000
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KIA
23+
TO-252
8000
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KIA
23+24
SOT252
16992
專業(yè)經(jīng)營各種場效應(yīng)管、三極管、IGBT、可控硅、穩(wěn)壓IC
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KEC
1415+
TO-252
28500
全新原裝正品,優(yōu)勢熱賣
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RECTRON
23+
TO-220F
69820
終端可以免費供樣,支持BOM配單!
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NEC
2023+
TO-220
80000
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NEC
23+
TO-220
10000
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更多KIA830H供應(yīng)商 更新時間2024-11-16 10:20:00

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