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零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
KP11N60F	文件：390.31 Kbytes Page：6 Pages	N CHANNEL MOS FIELD EFFECT TRANSISTOR GeneralDescription ThisSuperJunctionMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,I	KECKEC CORPORATION KEC株式會(huì)社	KEC
KP11N60F_15	文件：390.31 Kbytes Page：6 Pages	N CHANNEL MOS FIELD EFFECT TRANSISTOR	KECKEC CORPORATION KEC株式會(huì)社	KEC
KPS11N60D	文件：388.63 Kbytes Page：6 Pages	ThisSuperJunctionMOSFEThasbettercharacteristics	KECKEC CORPORATION KEC株式會(huì)社	KEC
KPS11N60F	文件：390.57 Kbytes Page：6 Pages	ThisSuperJunctionMOSFEThasbettercharacteristics	KECKEC CORPORATION KEC株式會(huì)社	KEC
KSM11N60	文件：2.00345 Mbytes Page：9 Pages	Loweffectiveoutputcapacitance	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
MDF11N60	文件：959.32 Kbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDF11N60TH	文件：322.54 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
MDF11N60TH	文件：959.32 Kbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDFS11N60	文件：1.03851 Mbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDFS11N60TH	文件：322.54 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
MDFS11N60TH	文件：1.03851 Mbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDP11N60	文件：1.04564 Mbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDP11N60	文件：1.03328 Mbytes Page：8 Pages	N-Channel650V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
MDP11N60TH	文件：332.35 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
MDP11N60TH	文件：1.04564 Mbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MGP11N60E	文件：120.21 Kbytes Page：5 Pages	SHORTCIRCUITRATEDLOWON-VOLTAGE InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
MGP11N60E	文件：123.51 Kbytes Page：6 Pages	InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications	Motorola Motorola, Inc	Motorola
MGP11N60ED	文件：145.87 Kbytes Page：6 Pages	SHORTCIRCUITRATEDLOWON-VOLTAGE InsulatedGateBipolarTransistorwithAnti-ParallelDiode N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–block	ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司	ONSEMI
OM11N60	文件：33.32 Kbytes Page：4 Pages	POWERMOSFETINHERMETICISOLATED [Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat	etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商	etc2
OM11N60SA	文件：33.32 Kbytes Page：4 Pages	POWERMOSFETINHERMETICISOLATED [Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat	etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商	etc2

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詳細(xì)參數(shù)

型號(hào)：
KP11N60F
制造商：
KEC
制造商全稱：
KEC(Korea Electronics)
功能描述：
N CHANNEL MOS FIELD EFFECT TRANSISTOR

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
上海市鑫鴻達(dá)電子	KP11N60F	KEC	2022+		50	全新原裝貨期兩周	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	KP11N60F	KEC	23+	TO-220F	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳廊盛科技有限公司	KP11N60F	KEC	2022	TO-220F	80000	原裝現(xiàn)貨,OEM渠道,歡迎咨詢	詢價(jià)
深圳市河鋒鑫科技有限公司	KP11N60F	KEC	2022+	TO-220F	50000	原廠代理終端免費(fèi)提供樣品	詢價(jià)
深圳市得捷芯城科技有限公司	KP11N60F	KEC	23+	NA/	19	優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	KP11N60F	KEC	22+	TO220F	12000	只做原裝、原廠優(yōu)勢(shì)渠道、假一賠十	詢價(jià)
深圳市辰德隆電子科技有限公司	KP11N60F	KEC	23+	TO220F	6000	只有原裝正品,老板發(fā)話合適就出	詢價(jià)
深圳市明嘉萊科技有限公司	KP11N60F	KEC	24+	TO220F	990000	明嘉萊只做原裝正品現(xiàn)貨	詢價(jià)
深圳市仟禧電子有限公司	KP11N60F-U/PFMOS(場(chǎng)效應(yīng)管)	KEC	22+	TO-220IS	20000	深圳原裝現(xiàn)貨正品有單價(jià)格可談	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	KP11N60F-U/P	KEC	23+	TO220F	13000	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)

更多KP11N60F供應(yīng)商更新時(shí)間2024-11-19 9:50:00

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