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KSMD8P10

100V P-Channel MOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMD8P10TM_F085

100V P-Channel MOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU8P10

Excellentpackageforgoodheatdissipation.

KERSEMI

Kersemi Electronic Co., Ltd.

MTM8P10

POWERFIELDEFFECTTRANSISTOR

PowerFieldEffectTransistor P-ChannelEnhancement-ModeSiliconGateTMOS TMOSPOWERFETs8AMPERES rDS(on)=0.4OHM80and100VOLTS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTM8P10

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-8A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP8P10

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-8A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP8P10

N-Channel100-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

MTP8P10

POWERFIELDEFFECTTRANSISTOR

PowerFieldEffectTransistor P-ChannelEnhancement-ModeSiliconGateTMOS TMOSPOWERFETs8AMPERES rDS(on)=0.4OHM80and100VOLTS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP8P10

POWERFIELDEFFECTTRANSISTOR

PowerFieldEffectTransistor P-ChannelEnhancement-ModeSiliconGateTMOS TMOSPOWERFETs8AMPERES rDS(on)=0.4OHM80and100VOLTS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

RFM8P10

-8A,-80VAND-100V,0.400Ohm,P-CHANNELPOWERMOSFETS

ThisP-Channelenhancementmodesilicongatepowerfieldeffecttransistorisdesignedforapplicationssuchasswitchingregulators,switchingconvertors,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.Thesety

HARRIS

Harris Corporation

RFP8P10

8A,100V,0.400Ohm,P-ChannelPowerMOSFET

ThisP-Channelenhancementmodesilicongatepowerfieldeffecttransistorisdesignedforapplicationssuchasswitchingregulators,switchingconvertors,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.Thesety

Intersil

Intersil Corporation

RFP8P10

P-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

RFP8P10

-8A,-80VAND-100V,0.400Ohm,P-CHANNELPOWERMOSFETS

ThisP-Channelenhancementmodesilicongatepowerfieldeffecttransistorisdesignedforapplicationssuchasswitchingregulators,switchingconvertors,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.Thesety

HARRIS

Harris Corporation

V8P10

HighCurrentDensitySurfaceMountTMBS?(TrenchMOSBarrierSchottky)Rectifier

FEATURES ?Verylowprofile-typicalheightof1.1mm ?Idealforautomatedplacement ?TrenchMOSSchottkytechnology ?Lowforwardvoltagedrop,lowpowerlosses ?Highefficiencyoperation ?MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C ?AEC-Q101qualifiedavailable? -

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V8P10

HighCurrentDensitySurfaceMountTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V8P10

HighCurrentDensitySurfaceMountTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

V8P10

HighCurrentDensitySurfaceMountTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

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10000
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6000
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6000
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25000
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KERSEMI
24+
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12300
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KUU
23+
SOD123FL
6000
誠信服務(wù),絕對原裝原盤
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KERSEMI
20+
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38900
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KERSEMI/科盛美
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50000
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10000
原裝現(xiàn)貨假一罰十
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13000
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更多KSMD8P10供應(yīng)商 更新時(shí)間2024-12-31 14:30:00