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KSMF7N60NZ

N-Channel UniFET ll MOSFET 600 V, 6.5 A, 1.25

KERSEMI

Kersemi Electronic Co., Ltd.

MDF7N60

N-ChannelMOSFET600V,7A,1.15(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF7N60BTH

N-ChannelMOSFET600V,7.0A,1.15(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF7N60BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDF7N60TH

N-ChannelMOSFET600V,7A,1.15(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF7N60TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDP7N60

N-ChannelMOSFET600V,7A,1.15(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP7N60B

N-ChannelMOSFET600V,7.0A,1.15(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP7N60BTH

N-ChannelMOSFET600V,7.0A,1.15(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP7N60TH

N-ChannelMOSFET600V,7A,1.15(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP7N60TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MGP7N60E

InsulatedGateBipolarTransistor

ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplicationsrequiringbothahightemperatureshortcircuitcapabilityandalowVCE(on)

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MGP7N60E

InsulatedGateBipolarTransistor

ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplicationsrequiringbothahightemperatureshortcircuitcapabilityandalowVCE(on)

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGP7N60ED

InsulatedGateBipolarTransistorwithrAnti-ParallelDiode

ThisInsulatedGateBipolarTransistor(IGBT)isco–packaged withasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplicationsrequiringboth

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MS7N60

N-ChannelEnhancementModePowerMOSFET

BWTECH

Bruckewell Technology LTD

MSF7N60

600VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

MTN7N60BFP

N-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTN7N60FP

N-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTP7N60

N-ChannelMosfetTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

NJ7N60

7.4A600VN-CHANNELPOWERMOSFET

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
KERSEMI
23+
TO-220F
10000
公司只做原裝正品
詢價(jià)
KERSEMI
TO-220F
22+
6000
十年配單,只做原裝
詢價(jià)
KERSEMI
23+
TO-220F
6000
原裝正品,支持實(shí)單
詢價(jià)
KERSEMI
22+
TO-220F
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價(jià)
KERSEMI
24+
TO-TO-220F
12300
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
詢價(jià)
KINGSTATE
22+
NA
30000
100%全新原裝 假一賠十
詢價(jià)
KINGSTATE
2021+
SMD
100500
一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長期排單到貨
詢價(jià)
KINGSTATE
2022+
NA
10000
只做原裝,價(jià)格優(yōu)惠,長期供貨。
詢價(jià)
KINGSTATE
23+
NA
13000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
Kingstate
2022+
原廠原包裝
6800
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
詢價(jià)
更多KSMF7N60NZ供應(yīng)商 更新時(shí)間2025-1-12 14:30:00